LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20120228580A1
• Filed: 06/20/2011
• Published: 09/13/2012
• Est. Priority Date: 03/11/2011
• Status: Abandoned Application

• Current Assignee: Chi Mei Lighting Technology Corp. (InnoLux Corporation)
• Original Assignee: Chi Mei Lighting Technology Corp. (InnoLux Corporation)
• Inventors: Wang, Hsin Chuan, Wu, Hao Ching
• Application Number:
  US13/164,251
• Publication Number:
  US 20120228580A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting diode device and a method for manufacturing the same. In one embodiment, the light-emitting diode device comprises a substrate, an undoped semiconductor layer and a current blocking structure disposed on the substrate in sequence, a plurality of light-emitting structures, separately disposed on the current blocking structure, a plurality of insulating spacers, respectively located between the adjacent light-emitting structures, and a plurality of conductive wires. Each of the light-emitting structures has a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first electrode and a second electrode. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types. The plurality of conductive wires respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence.

Claims

1. A light-emitting diode (LED) device, comprising:

a substrate;

an undoped semiconductor layer, disposed on the substrate;

a current blocking structure, disposed on the undoped semiconductor layer;

a plurality of light-emitting structures, separately disposed on the current blocking structure, wherein each of the light-emitting structures comprises;

a first conductivity type semiconductor layer;

an active layer, located on a part of the first conductivity type semiconductor layer;

a second conductivity type semiconductor layer, located on the active layer, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types; and

a first electrode and a second electrode, respectively located on the other part of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;

a plurality of insulating spacers, respectively located between the adjacent light-emitting structures; and

a plurality of conductive wires, respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence.

2. The LED device according to claim 1, wherein the current blocking structure comprises a lightly-doped semiconductor layer, and a doping concentration of the lightly-doped semiconductor layer ranges from 8×

10¹⁶ cm<sup>−

3</sup> to 8×

10¹⁷ cm<sup>−

3</sup>.

3. The LED device according to claim 2, wherein a thickness of the lightly-doped semiconductor layer ranges from 0.01 μ

m to 3 μ

m.

4. The LED device according to claim 1, wherein a material of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is a nitride semiconductor material, and the current blocking structure comprises an undoped AlGaN layer.

5. The LED device according to claim 4, wherein the current blocking structure further comprises a lightly-doped semiconductor layer or another first conductivity type semiconductor layer between the undoped AlGaN layer and the undoped semiconductor layer.

6. The LED device according to claim 5, wherein a thickness of the lightly-doped semiconductor layer or the other first conductivity type semiconductor layer ranges from 0.01 μ

m to 3 μ

m.

7. The LED device according to claim 1, wherein the current blocking structure comprises a super lattice structure.

8. The LED device according to claim 7, wherein the super lattice structure is an alternate stacking structure of Al_x1In_y1Ga_1-x1-y1N and Al_x2In_y2Ga_1-x2-y2N, where x1>

x2.

9. The LED device according to claim 7, wherein the current blocking structure further comprises a lightly-doped semiconductor layer or another first conductivity type semiconductor layer between the super lattice structure and the undoped semiconductor layer.

10. The LED device according to claim 9, wherein a thickness of the lightly-doped semiconductor layer or the other first conductivity type semiconductor layer ranges from 0.01 μ

m to 3 μ

m.

11. The LED device according to claim 1, wherein the current blocking structure comprises a Mg-doped semiconductor layer, and the first conductivity type semiconductor layer is n-type and the second conductivity type semiconductor layer is p-type.

12. The LED device according to claim 11, wherein a material of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is a nitride semiconductor material, and a material of the Mg-doped semiconductor layer is a Mg-doped nitride semiconductor material.

13. The LED device according to claim 11, wherein the current blocking structure further comprises a lightly-doped semiconductor layer or another first conductivity type semiconductor layer between the Mg-doped semiconductor layer and the undoped semiconductor layer.

14. A method for manufacturing a light-emitting diode (LED) device, comprising:

providing a substrate;

forming an undoped semiconductor layer on the substrate;

forming a current blocking structure on the undoped semiconductor layer;

forming a plurality of light-emitting structures, wherein the light-emitting structures are separately located on the current blocking structure and each of the light-emitting structures comprises;

a first conductivity type semiconductor layer;

an active layer, located on a part of the first conductivity type semiconductor layer;

a second conductivity type semiconductor layer, located on the active layer, wherein the first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types; and

a first electrode and a second electrode, respectively located on the other part of the first conductivity type semiconductor layer and the second conductivity type semiconductor layer;

forming a plurality of insulating spacers respectively located between the adjacent light-emitting structures; and

forming a plurality of conductive wires respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence.

15. The method for manufacturing an LED device according to claim 14, wherein the step of forming the light-emitting structures comprises:

forming a first conductivity type semiconductor material layer, an active material layer and a second conductivity type semiconductor material layer stacked in sequence on the current blocking structure;

removing a part of the second conductivity type semiconductor material layer and a part of the active material layer to expose a part of the first conductivity type semiconductor material layer and form the active layers and the second conductivity type semiconductor layers;

forming the first electrodes and the second electrodes; and

removing a part of the exposed part of the first conductivity type semiconductor material layer to form a plurality of separate trenches in the first conductivity type semiconductor material layer and the current blocking structure so as to form the first conductivity type semiconductor layers.

16. The method for manufacturing an LED device according to claim 14, wherein the current blocking structure comprises a lightly-doped semiconductor layer, and a doping concentration of the lightly-doped semiconductor layer ranges from 8×

10¹⁶ cm<sup>−

3</sup> to 8×

10¹⁷ cm<sup>−

3</sup>.

17. The method for manufacturing an LED device according to claim 16, wherein a thickness of the lightly-doped semiconductor layer ranges from 0.01 μ

m to 3 μ

m.

18. The method for manufacturing an LED device according to claim 14, wherein a material of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer is a nitride semiconductor material, and the current blocking structure comprises an undoped AlGaN layer.

19. The method for manufacturing an LED device according to claim 18, wherein the step of forming the current blocking structure further comprises forming a lightly-doped semiconductor layer or another first conductivity type semiconductor layer on the undoped semiconductor layer.

20. The method for manufacturing an LED device according to claim 19, wherein a thickness of the lightly-doped semiconductor layer or the other first conductivity type semiconductor layer ranges from 0.01 μ

m to 3 μ

m.

21. The method for manufacturing an LED device according to claim 14, wherein the current blocking structure comprises a super lattice structure.

22. The method for manufacturing an LED device according to claim 21, wherein the step of forming the current blocking structure further comprises forming a lightly-doped semiconductor layer or another first conductivity type semiconductor layer on the undoped semiconductor layer.

23. The method for manufacturing an LED device according to claim 14, wherein the current blocking structure comprises a Mg-doped semiconductor layer, and the Mg-doped semiconductor layer is p-type, the first conductivity type semiconductor layer is n-type, and the second conductivity type semiconductor layer is p-type.

24. The method for manufacturing an LED device according to claim 23, wherein the step of forming the current blocking structure further comprises forming a lightly-doped semiconductor layer or another first conductivity type semiconductor layer on the undoped semiconductor layer.