SEMICONDUCTOR LIGHT EMITTING ELEMENT
First Claim
1. A semiconductor light emitting element comprising;
- a semiconductor stack part includes a light emitting layer;
a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, reflects incident light in multimode according to Bragg'"'"'s condition of diffraction and transmits incident light in multimode according to Bragg'"'"'s condition of diffraction; and
a reflective face which reflects multimode light diffracted at the diffractive face and let this light be incident to the diffractive face again, wherein;
the semiconductor stack part is formed on the diffractive face;
the convex portions or concave portions have a side surface and a curved portion which curves and extends to center side of the convex portions or concave portions from the upper end of the side surface.
1 Assignment
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Accused Products
Abstract
[PROBLEM] A light extraction efficiency increases by suppressing a reflection of a semiconductor layer and a transparent substrate.
[MEANS FOR SOLVING] A semiconductor light emitting element comprising a semiconductor stack part including a light emitting layer is formed on a main surface of a substrate, a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than optical wavelength of the light and is shorter than coherent length of the light, is formed on a main surface side of the substrate, and a reflective face which reflects light diffracted at the diffractive face and let this light be incident to the diffractive face again is formed on a back surface side of the substrate.
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Citations
16 Claims
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1. A semiconductor light emitting element comprising;
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a semiconductor stack part includes a light emitting layer; a diffractive face that light emitted from the light emitting layer is incident to, that convex portions or concave portions are formed in a period which is longer than an optical wavelength of the light and is shorter than a coherent length of the light, reflects incident light in multimode according to Bragg'"'"'s condition of diffraction and transmits incident light in multimode according to Bragg'"'"'s condition of diffraction; and a reflective face which reflects multimode light diffracted at the diffractive face and let this light be incident to the diffractive face again, wherein; the semiconductor stack part is formed on the diffractive face; the convex portions or concave portions have a side surface and a curved portion which curves and extends to center side of the convex portions or concave portions from the upper end of the side surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification