Optoelectronic Component Having a Semiconductor Body, an Insulating Layer, and a Planar Conductor Structure, and Method for the Production thereof

• US 20120228663A1
• Filed: 08/05/2010
• Published: 09/13/2012
• Est. Priority Date: 09/03/2009
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Weidner, Karl, Wirth, Ralph, Wegleiter, Walter, Kaltenbacher, Axel
• Application Number:
  US13/394,058
• Publication Number:
  US 20120228663A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/24101 Connecting bonding areas at the same height
• CPC Class Codes: H01L 2224/24105 Connecting bonding areas at different heights
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24998 Reinforcing structures, e.g. ramp-like support
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01075 Rhenium [Re]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/12036 PN diode
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 33/005 : Processes
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein at least one electrical connection region, on which a metallization bump is arranged, is arranged on the radiation exit side, the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by the metallization bump.

Claims

1. An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein:

at least one electrical connection region, on which a metallization bump is arranged is arranged on the radiation exit side,

the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and

at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by means of the metallization bump.

2. The optoelectronic component according to claim 1, wherein the metallization bump is a studbump.

3. The optoelectronic component according to claim 1, wherein the metallization bump is a solder ball.

4. The optoelectronic component according to claim 1, wherein the metallization bump contains a nickel-gold compound and/or a nickel-palladium compound.

5. The optoelectronic component according to claim 1, wherein the insulating layer is transparent to a radiation emitted by the semiconductor body.

6. The optoelectronic component according to claim 1, wherein conversion material is arranged in the insulating layer.

7. The optoelectronic component according to claim 1, wherein at least one further semiconductor body is arranged on the substrate.

8. The optoelectronic component according to claim 7, wherein the semiconductor body and the further semiconductor body are electrically conductively connected to one another by means of a further planar conductor structure.

9. A method for producing an optoelectronic component comprising the steps of:

A) arranging a semiconductor body by a side facing away from a radiation exit side on a substrate,

B) applying a metallization bump on an electrical connection region of the semiconductor body, which is arranged on the radiation exit side,

C) subsequently applying an insulating layer to the semiconductor body in such a way that the metallization bump projects beyond the insulating layer.

10. The method according to claim 9, wherein method step B) comprises a screen printing method or a reflow method.

11. The method according to claim 9, wherein the metallization bump is a solder ball, wherein method step B) comprises a soldering process.

12. The method according to claim 9, wherein method step C) comprises laminating the insulating layer under pressure.

13. The method according to claim 9, wherein method step C) comprises a screen printing method or a molding method.

14. The method according to claim 9, wherein in method step C), the insulating layer is pressed onto the metallization bumps.

15. The method according to claim 9, wherein method step C) comprises uncovering the metallization bump by means of a stamping process, a grinding process, laser ablation, a plasma process or a flycut process.

16. An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein:

at least one electrical connection region on which a metallization bump is arranged is arranged on the radiation exit side,

the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer,

at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by means of the metallization bump,

the metallization bump is a solder ball,

the metallization bump contains a nickel-gold compound and/or a nickel-palladium compound, and

the metallization bump is a sphere-like body or a post-type body.