SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
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1. A semiconductor device comprising:
- an N-type drift layer;
a P-type anode layer on the N-type drift layer;
a trench penetrating the P-type anode layer;
a conductive substance embedded in the trench via an insulating film; and
an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer.
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Abstract
A semiconductor device includes: an N-type drift layer; a P-type anode layer on the N-type drift layer; a trench penetrating the P-type anode layer; a conductive substance embedded in the trench via an insulating film; and an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer.
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Citations
5 Claims
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1. A semiconductor device comprising:
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an N-type drift layer; a P-type anode layer on the N-type drift layer; a trench penetrating the P-type anode layer; a conductive substance embedded in the trench via an insulating film; and an N-type buffer layer between the N-type drift layer and the P-type anode layer and having impurity concentration which is higher than that of the N-type drift layer. - View Dependent Claims (2, 3)
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4. A method for manufacturing a semiconductor device comprising:
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forming a P-type anode layer on a top surface of an N-type drift layer; selectively forming an N-type cathode layer in a first region of an underside of the N-type drift layer; and selectively forming a P-type cathode layer in a second region which is different from the first region of the underside of the N-type drift layer.
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5. A semiconductor device comprising
an N-type drift layer; -
a P-type anode layer on a part of the N-type drift layer; an anode electrode connected to the P-type anode layer; and an insulating film between an outer end of the P-type anode layer and the anode electrode, wherein a length between the outer end of the P-type anode layer and an inner end of the insulating film is 100 μ
m or above.
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Specification