MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP

• US 20120228730A1
• Filed: 05/21/2012
• Published: 09/13/2012
• Est. Priority Date: 03/13/2006
• Status: Abandoned Application

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: AKIYAMA, Shoji, Kubota, Yoshihiro, Ito, Atsuo, Kawai, Makoto, Tobisaka, Yuuji, Tanaka, Koichi
• Application Number:
  US13/476,301
• Publication Number:
  US 20120228730A1
• Time in Patent Office: Days
• US Class Current: 257/431
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer.

Claims

1-10. -10. (canceled)

11. A chip comprising a semiconductor element for fluorescence/absorbed light analysis wherein said microchip is fabricated using an SOI substrate manufactured by a method comprising:

(1) forming a hydrogen ion-implanted layer by implanting ions into the bonding surface of a silicon substrate;

(2) applying a surface activation treatment to the bonding surface of at least one of said silicon substrate and said glass substrate;

(3) bonding together said silicon substrate and said glass substrate; and

(4) transferring a silicon layer onto said glass substrate by peeling off the surface layer of said silicon substrate along said hydrogen ion-implanted layer.

12. The chip according to claim 11, wherein said surface activation treatment is carried out by means of at least one of plasma treatment and ozone treatment.

13. The chip according to claim 11, further comprising heat-treating said silicon substrate and said glass substrate after said bonding together, with said silicon substrate and said glass substrate bonded together.

14. The chip according to claim 13, wherein said heat treatment is carried out at a temperature of 100°

C. or higher but not higher than 300°

C.

15. The chip according to claim 11, further comprising

(5) polishing the peeling plane of said silicon layer so that the surface roughness (RMS) thereof is not greater than 3 nm.

16. The chip according to claim 11, wherein a principal surface of said glass substrate comprises a concave portion, and a semiconductor element for analyzing/evaluating a sample attached/held to said concave portion is provided in said silicon layer provided on the other principal surface of said glass substrate.

17. The chip according to claim 11, further comprising an insulating layer formed on a surface of said silicon layer;

sample-holding means provided on said insulating layer;

biasing means for forming a depletion layer in a boundary face between said insulating layer and said silicon layer; and

a signal-detecting circuit for detecting the amount of photoelectric current generated depending on the thickness of said depletion layer which varies according to the amount of charge provided by an analyte held by said sample-holding portion.

18. The chip according to claim 11, wherein said glass substrate is a quartz substrate.

19. The chip according to claim 16, wherein said concave portion is a flow passage or a hole.

20. The chip according to claim 11, wherein said semiconductor element comprises a light-receiving element and a photoelectric conversion element.