OVERLAY CLASS F CHOKE

• US 20120229210A1
• Filed: 09/07/2011
• Published: 09/13/2012
• Est. Priority Date: 04/20/2010
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: RF Micro Devices Incorporated (Qorvo, Inc.)
• Inventors: Jones, David E., Stockert, Terry J., Southcombe, William David, Levesque, Chris, Yoder, Scott
• Granted Patent: US 9,030,256 B2
• Time in Patent Office: Days
• US Class Current: 330/250
• CPC Class Codes: H03F 1/0227 using supply converters
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/171 A filter circuit coupled to the output of an amplifier
• CPC Class Codes: H03F 2200/222 A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier
• CPC Class Codes: H03F 2200/27 A biasing circuit node being switched in an amplifier circuit
• CPC Class Codes: H03F 2200/318 A matching circuit being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/336 A I/Q, i.e. phase quadrature, modulator or demodulator being used in an amplifying circuit
• CPC Class Codes: H03F 2200/387 A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
• CPC Class Codes: H03F 2200/411 the output amplifying stage of an amplifier comprising two power stages
• CPC Class Codes: H03F 2200/414 A switch being coupled in the output circuit of an amplifier to switch the output on/off
• CPC Class Codes: H03F 2200/417 A switch coupled in the output circuit of an amplifier being controlled by a circuit
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2200/504 the supply voltage or current being continuously controlled by a controlling signal, e.g. the controlling signal of a transistor implemented as variable resistor in a supply path for, an IC-block showed amplifier
• CPC Class Codes: H03F 2200/534 Transformer coupled at the input of an amplifier
• CPC Class Codes: H03F 2200/537 A transformer being used as coupling element between two amplifying stages
• CPC Class Codes: H03F 2200/541 Transformer coupled at the output of an amplifier
• CPC Class Codes: H03F 2203/21106 An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
• CPC Class Codes: H03F 2203/21142 Output signals of a plurality of power amplifiers are parallel combined to a common output
• CPC Class Codes: H03F 2203/21157 A filter circuit being added at the output of a power amplifier stage
• CPC Class Codes: H03F 3/195 : in integrated circuits
• CPC Class Codes: H03F 3/211 : using a combination of several amplifiers H03F3/60 takes precedence
• CPC Class Codes: H03F 3/245 : with semiconductor devices only
• CPC Class Codes: H03F 3/602 : Combinations of several amplifiers
• CPC Class Codes: H03F 3/72 : Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H03G 3/00 : Gain control in amplifiers or frequency changers

Abstract

Embodiments of the present disclosure relate to an overlay class F choke of a radio frequency (RF) power amplifier (PA) stage and an RF PA amplifying transistor of the RF PA stage. The overlay class F choke includes a pair of mutually coupled class F inductive elements, which are coupled in series between a PA envelope power supply and a collector of the RF PA amplifying transistor. In one embodiment of the RF PA stage, the RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. The collector of the RF PA amplifying transistor provides the RF stage output signal. The PA envelope power supply provides an envelope power supply signal to the overlay class F choke. The envelope power supply signal provides power for amplification.

Claims

1. Circuitry comprising:

a radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage; and

an overlay class F choke of the RF PA stage, such that the overlay class F choke comprises a pair of mutually coupled class F inductive elements coupled in series between a PA envelope power supply and a collector of the RF PA amplifying transistor.

2. The circuitry of claim 1 wherein the RF PA stage is adapted to receive and amplify an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor.

3. The circuitry of claim 2 wherein the collector of the RF PA amplifying transistor provides the RF stage output signal.

4. The circuitry of claim 1 wherein the PA envelope power supply is adapted to provide an envelope power supply signal to the overlay class F choke, such that the envelope power supply signal provides power for amplification.

5. The circuitry of claim 1 wherein the overlay class F choke is adapted to provide direct current (DC) to the RF PA amplifying transistor and present prescribed impedances to the RF PA amplifying transistor at certain frequencies.

6. The circuitry of claim 1 wherein the RF PA stage is adapted to operate as a class F amplifier.

7. The circuitry of claim 1 wherein the pair of mutually coupled class F inductive elements is constructed, such that there is mutual coupling between the pair of mutually coupled class F inductive elements.

8. The circuitry of claim 7 wherein the mutual coupling comprises at least one of electrostatic coupling and magnetic coupling.

9. The circuitry of claim 7 wherein the pair of mutually coupled class F inductive elements are overlaid, such that one of the pair of mutually coupled class F inductive elements is overlaid over another of the pair of mutually coupled class F inductive elements to provide the mutual coupling.

10. The circuitry of claim 7 wherein the pair of mutually coupled class F inductive elements are constructed side-by-side to provide the mutual coupling.

11. The circuitry of claim 1 wherein the pair of mutually coupled class F inductive elements comprises a class F series inductive element and a class F tank inductive element.

12. The circuitry of claim 11 wherein the class F series inductive element and the class F tank inductive element are coupled in series between the PA envelope power supply and the collector of the RF PA amplifying transistor, such that there is mutual coupling between the class F series inductive element and the class F tank inductive element.

13. The circuitry of claim 11 wherein the overlay class F choke further comprises a class F tank capacitive element coupled across the class F tank inductive element to form a parallel resonant tank circuit.

14. The circuitry of claim 11 wherein the overlay class F choke further comprises:

a class F bypass capacitive element coupled between the PA envelope power supply and a ground; and

a class F tank capacitive element coupled between the pair of mutually coupled class F inductive elements and the ground, such that a series combination of the class F bypass capacitive element and the class F tank capacitive element are coupled across the class F tank inductive element to form a parallel resonant tank circuit.

15. The circuitry of claim 1 further comprising:

a supporting structure, which provides the pair of mutually coupled class F inductive elements; and

an RF PA semiconductor die, which is attached to the supporting structure, and provides the RF PA amplifying transistor and a class F tank capacitive element.

16. The circuitry of claim 1 further comprising:

a first RF PA comprising;

the RF PA stage;

a first non-quadrature PA path having a first single-ended output; and

a first quadrature PA path coupled between the first non-quadrature PA path and an antenna port, such that the first quadrature PA path has a first single-ended input, which is coupled to the first single-ended output; and

a second RF PA comprising a second quadrature PA path coupled to the antenna port,

wherein the antenna port is configured to be coupled to an antenna.

17. The circuitry of claim 1 further comprising:

a first multi-mode multi-band quadrature RF PA comprising the RF PA stage and coupled to multi-mode multi-band alpha switching circuitry via a single alpha PA output; and

the multi-mode multi-band alpha switching circuitry having;

a first alpha non-linear mode output associated with a first non-linear mode RF communications band; and

a plurality of alpha linear mode outputs, such that each of the plurality of alpha linear mode outputs is associated with a corresponding one of a first plurality of linear mode RF communications bands.

18. The circuitry of claim 1 further comprising:

a first RF PA comprising the RF PA stage, which is a first final stage having a first final bias input, such that bias of the first final stage is via the first final bias input;

PA control circuitry;

a PA-digital communications interface (DCI) coupled between a digital communications bus and the PA control circuitry; and

a final stage current digital-to-analog converter (IDAC) coupled between the PA control circuitry and the first final bias input.

19. The circuitry of claim 1 further comprising:

a first RF PA comprising the RF PA stage, which is a first final stage, such that the first RF PA is adapted to;

receive and amplify a first RF input signal to provide a first RF output signal; and

receive a first final bias signal to bias the first final stage;

PA bias circuitry adapted to receive a bias power supply signal and provide the first final bias signal based on the bias power supply signal; and

a direct current (DC)-DC converter adapted to receive a DC power supply signal from a DC power supply and provide the bias power supply signal based on the DC power supply signal, such that a voltage of the bias power supply signal is greater than a voltage of the DC power supply signal.

20. The circuitry of claim 1 further comprising:

a direct current (DC)-DC converter comprising;

the PA envelope power supply comprising a charge pump buck converter coupled to RF PA circuitry; and

a PA bias power supply comprising a charge pump coupled to the RF PA circuitry; and

the RF PA circuitry comprising the RF PA stage.

21. The circuitry of claim 1 further comprising:

multi-mode multi-band radio frequency (RF) power amplification circuitry comprising the RF PA stage and having at least a first RF input and a plurality of RF outputs, such that;

configuration of the multi-mode multi-band RF power amplification circuitry associates one of the at least the first RF input with one of the plurality of RF outputs; and

the configuration is associated with at least a first look-up table (LUT);

PA control circuitry coupled between the multi-mode multi-band RF power amplification circuitry and a PA-digital communications interface (DCI), such that the PA control circuitry has at least the first LUT, which is associated with at least a first defined parameter set; and

the PA-DCI, which is coupled to a digital communications bus.

22. A method comprising:

providing a radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage;

providing an overlay class F choke having a pair of mutually coupled class F inductive elements of the RF PA stage; and

coupling the pair of mutually coupled class F inductive elements in series between a PA envelope power supply and a collector of the RF PA amplifying transistor.