METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20120231581A1
• Filed: 03/07/2012
• Published: 09/13/2012
• Est. Priority Date: 03/11/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, MARUYAMA, Tetsunori, SATO, Yuhei, SATO, Keiji
• Granted Patent: US 8,753,928 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

In a process of manufacturing a transistor including an oxide semiconductor layer, an amorphous oxide semiconductor layer which includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state is formed over a silicon oxide film, an aluminum oxide film is formed over the amorphous oxide semiconductor layer, and then heat treatment is performed so that at least part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a silicon oxide film;

forming an amorphous oxide semiconductor layer over the silicon oxide film;

forming an aluminum oxide film over the amorphous oxide semiconductor layer; and

after forming the aluminum oxide film, performing a heat treatment on the amorphous oxide semiconductor layer,

wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state.

2. The method of manufacturing the semiconductor device according to claim 1, wherein the heat treatment is performed so that a part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

3. The method of manufacturing the semiconductor device according to claim 1, wherein the silicon oxide film includes a region containing excess oxygen as compared to a stoichiometric composition ratio of crystalline silicon oxide.

4. The method of manufacturing the semiconductor device according to claim 1, further comprising a step of:

forming an oxide insulating film between the amorphous oxide semiconductor layer and the aluminum oxide film.

5. The method of manufacturing the semiconductor device according to claim 1, wherein the silicon oxide film and the amorphous oxide semiconductor layer are successively formed without exposure to air.

6. The method of manufacturing the semiconductor device according to claim 1, wherein the amorphous oxide semiconductor layer comprises a three-component metal oxide.

7. A method of manufacturing a semiconductor device comprising the steps of:

forming a silicon oxide film;

forming an amorphous oxide semiconductor layer over the silicon oxide film;

performing a first heat treatment on the amorphous oxide semiconductor layer;

forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and

after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer,

wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state.

8. The method of manufacturing the semiconductor device according to claim 7, wherein the second heat treatment is performed so that a part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

9. The method of manufacturing the semiconductor device according to claim 7, wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment.

10. The method of manufacturing the semiconductor device according to claim 7, wherein the first heat treatment is performed so that hydrogen or moisture contained in the amorphous oxide semiconductor layer is released.

11. The method of manufacturing the semiconductor device according to claim 7, wherein the silicon oxide film includes a region containing excess oxygen as compared to a stoichiometric composition ratio of crystalline silicon oxide.

12. The method of manufacturing the semiconductor device according to claim 7, further comprising a step of:

forming an oxide insulating film between the amorphous oxide semiconductor layer and the aluminum oxide film.

13. The method of manufacturing the semiconductor device according to claim 7, wherein the silicon oxide film and the amorphous oxide semiconductor layer are successively formed without exposure to air.

14. The method of manufacturing the semiconductor device according to claim 7, wherein the amorphous oxide semiconductor layer comprises a three-component metal oxide.

15. A method of manufacturing a semiconductor device comprising the steps of:

forming a silicon oxide film;

forming an amorphous oxide semiconductor layer over the silicon oxide film;

forming a source electrode layer and a drain electrode layer, which are in contact with the amorphous oxide semiconductor layer;

forming an aluminum oxide film over the amorphous oxide semiconductor layer; and

after forming the aluminum oxide film, performing a heat treatment on the amorphous oxide semiconductor layer, thereby forming an oxide semiconductor layer comprising a channel formation region,

wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state.

16. The method of manufacturing the semiconductor device according to claim 15, wherein the heat treatment is performed so that a part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

17. The method of manufacturing the semiconductor device according to claim 15, wherein the silicon oxide film includes a region containing excess oxygen as compared to a stoichiometric composition ratio of crystalline silicon oxide.

18. The method of manufacturing the semiconductor device according to claim 15, further comprising a step of:

forming an oxide insulating film between the amorphous oxide semiconductor layer and the aluminum oxide film.

19. The method of manufacturing the semiconductor device according to claim 15, wherein the silicon oxide film and the amorphous oxide semiconductor layer are successively formed without exposure to air.

20. The method of manufacturing the semiconductor device according to claim 15, wherein the amorphous oxide semiconductor layer comprises a three-component metal oxide.

21. A method of manufacturing a semiconductor device comprising the steps of:

forming a silicon oxide film;

forming an amorphous oxide semiconductor layer over the silicon oxide film;

performing a first heat treatment on the amorphous oxide semiconductor layer;

forming a source electrode layer and a drain electrode layer, which are in contact with the amorphous oxide semiconductor layer;

forming an aluminum oxide film over the amorphous oxide semiconductor layer, after performing the first heat treatment; and

after forming the aluminum oxide film, performing a second heat treatment on the amorphous oxide semiconductor layer, thereby forming an oxide semiconductor layer comprising a channel formation region,

wherein the amorphous oxide semiconductor layer includes a region containing excess oxygen as compared to a stoichiometric composition ratio of an oxide semiconductor in a crystalline state.

22. The method of manufacturing the semiconductor device according to claim 21, wherein the second heat treatment is performed so that a part of the amorphous oxide semiconductor layer is crystallized and an oxide semiconductor layer which includes a crystal having a c-axis substantially perpendicular to a surface of the oxide semiconductor layer is formed.

23. The method of manufacturing the semiconductor device according to claim 21, wherein the second heat treatment is performed at a temperature higher than a temperature of the first heat treatment.

24. The method of manufacturing the semiconductor device according to claim 21, wherein the first heat treatment is performed so that hydrogen or moisture contained in the amorphous oxide semiconductor layer is released.

25. The method of manufacturing the semiconductor device according to claim 21, wherein the silicon oxide film includes a region containing excess oxygen as compared to a stoichiometric composition ratio of crystalline silicon oxide.

26. The method of manufacturing the semiconductor device according to claim 21, further comprising a step of:

forming an oxide insulating film between the amorphous oxide semiconductor layer and the aluminum oxide film.

27. The method of manufacturing the semiconductor device according to claim 21, wherein the silicon oxide film and the amorphous oxide semiconductor layer are successively formed without exposure to air.

28. The method of manufacturing the semiconductor device according to claim 21, wherein the amorphous oxide semiconductor layer comprises a three-component metal oxide.