MANUFACTURING METHOD OF THIN FILM TRANSISTOR

• US 20120231588A1
• Filed: 05/26/2011
• Published: 09/13/2012
• Est. Priority Date: 03/10/2011
• Status: Abandoned Application

• Current Assignee: Chunghwa Picture Tubes Limited
• Original Assignee: Chunghwa Picture Tubes Limited
• Inventors: Chiang, Shin-Chuan, Li, Huai-An, Lai, Yu-Hao
• Application Number:
  US13/117,130
• Publication Number:
  US 20120231588A1
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A manufacturing method of thin film transistors is provided. The manufacturing method includes: providing a substrate; forming a gate electrode; forming a gate insulating layer; forming a patterned oxide semiconductor layer; forming a source electrode and a drain electrode; and executing a localized laser treatment. A laser beam is used to irradiate at least a part of the patterned oxide semiconductor layer in the localized laser treatment. An electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam.

Claims

1. A manufacturing method of a thin film transistor, comprising:

providing a substrate;

forming a gate electrode on the substrate;

forming a gate insulating layer on the substrate;

forming a patterned oxide semiconductor layer on the substrate;

forming a source electrode and a drain electrode on the substrate; and

executing a localized laser treatment, the localized laser treatment employing a laser beam to irradiate at least a part of the patterned oxide semiconductor layer, wherein an electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam, and at least a part of the patterned oxide semiconductor layer irradiated by the laser beam contacts the source electrode or the drain electrode.

2. The manufacturing method of the thin film transistor of claim 1, wherein the source electrode and the drain electrode are formed before forming the patterned oxide semiconductor layer, and the localized laser treatment is executed before forming the source electrode and the drain electrode.

3. The manufacturing method of the thin film transistor of claim 1, wherein the patterned oxide semiconductor layer is formed before forming the source electrode and the drain electrode, and the localized laser treatment is executed after forming the source electrode and the drain electrode.

4. The manufacturing method of the thin film transistor of claim 1, wherein the patterned oxide semiconductor layer includes II-VI compounds.

5. The manufacturing method of the thin film transistor of claim 4, wherein the patterned oxide semiconductor layer further includes at least one of alkaline-earth metals, IIIA compounds, VA compounds, VIA compounds, or transition metals.

6. The manufacturing method of the thin film transistor of claim 4, wherein steps of forming the patterned oxide semiconductor layer include vacuum deposition, spin-on coating, inkjet printing, or screen printing.

7. The manufacturing method of the thin film transistor of claim 1, wherein the substrate includes a rigid substrate or a flexible substrate.

8. The manufacturing method of the thin film transistor of claim 7, wherein the rigid substrate includes a glass substrate.

9. The manufacturing method of the thin film transistor of claim 1, wherein a wavelength range of the laser beam in the localized laser treatment is between 250 nanometers and 500 nanometers.

10. The manufacturing method of the thin film transistor of claim 1, further comprising forming a patterned passivation layer on the patterned oxide semiconductor layer for protecting a part of the semiconductor layer from being influenced by the localized laser treatment, wherein the patterned passivation layer is formed before forming the source electrode and the drain electrode, and the localized laser treatment is executed before forming the source electrode and the drain electrode.