PRODUCTION PROCESS FOR SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device production process comprising:
- (a) forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids,(b) forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids,(c) forming on the n-type layer an active layer made of a group III nitride compound semiconductor,(d) forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor,(e) bonding a support substrate above the p-type layer,(f) peeling off the growth substrate at the boundary where the void are produced, and(g) planarizing the n-type layer, wherein(b) above comprises(b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak, and(b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
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Abstract
(a) Forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids. (b) Forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids. (c) Forming on the n-type layer an active layer made of a group III nitride compound semiconductor. (d) Forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor. (e) Bonding a support substrate above the p-type layer. (f) Peeling off the growth substrate at the boundary where the void are produced. (g) Planarizing the n-type layer. Step (b) comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong.
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Citations
4 Claims
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1. A semiconductor device production process comprising:
- (a) forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids,
(b) forming on the void-containing layer an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids, (c) forming on the n-type layer an active layer made of a group III nitride compound semiconductor, (d) forming on the active layer a p-type layer made of a p-type group III nitride compound semiconductor, (e) bonding a support substrate above the p-type layer, (f) peeling off the growth substrate at the boundary where the void are produced, and (g) planarizing the n-type layer, wherein (b) above comprises (b1) forming part of the n-type layer under conditions where horizontal growth is relatively weak, and (b2) forming the remaining part of the n-type layer under conditions where horizontal growth is relatively strong. - View Dependent Claims (2, 3, 4)
- (a) forming on a growth substrate a void-containing layer that is made of a group III nitride compound semiconductor and contains voids,
Specification