OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• US 20120235137A1
• Filed: 03/08/2012
• Published: 09/20/2012
• Est. Priority Date: 03/18/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: KOEZUKA, Junichi, SATO, Yuichi, OHNO, Shinji
• Granted Patent: US 8,927,982 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0259 Microstructure
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10B 99/00 Subject matter not provided for in other groups of this subclass

Abstract

A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. In a transistor using an oxide semiconductor film for an active layer, a microvoid is provided in a source region and a drain region adjacent to a channel region. By providing a microvoid in the source region and the drain region formed in an oxide semiconductor film, hydrogen contained in the channel region of an oxide semiconductor film can be captured in the microvoid.

Claims

1. An oxide semiconductor film comprising a microvoid,

wherein at least one of nitrogen, hydrogen, and oxygen is included in the microvoid, and

wherein a concentration of at least one of nitrogen, hydrogen, and oxygen in the microvoid is higher than that a concentration of at least one of nitrogen, hydrogen, and oxygen outside of the microvoid in the oxide semiconductor film.

2. An oxide semiconductor film according to claim 1,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

3. An oxide semiconductor film according to claim 1, further comprising a crystal portion in contact with a peripheral portion of the microvoid.

4. A semiconductor device comprising:

a gate electrode;

a gate insulating film covering the gate electrode;

a pair of electrodes over the gate insulating film; and

an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, being partly in contact with the pair of electrodes, including a channel region, a source region, and a drain region,

wherein densities of the source region and the drain region are lower than a density of the channel region.

5. A semiconductor device according to claim 4,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

6. A semiconductor device according to claim 5,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

7. A semiconductor device according to claim 4,

wherein the source region and the drain region include a microvoid.

8. A semiconductor device according to claim 7,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than the outside of the microvoid includes.

9. A semiconductor device according to claim 7,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

10. A semiconductor device according to claim 7,

wherein a crystal portion is included in contact with a peripheral portion of the microvoid.

11. A semiconductor device comprising:

an oxide semiconductor film including a channel region, a source region, and a drain region;

a pair of electrodes being partly in contact with the oxide semiconductor film;

a gate insulating film over the oxide semiconductor film; and

a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween,

wherein densities of the source region and the drain region are lower than a density of the channel region.

12. A semiconductor device according to claim 11,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

13. A semiconductor device according to claim 12,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

14. A semiconductor device according to claim 11,

wherein the source region and the drain region include a microvoid.

15. A semiconductor device according to claim 14,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than the outside of the microvoid includes.

16. A semiconductor device according to claim 14,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

17. A semiconductor device according to claim 14,

wherein a crystal portion is included in contact with a peripheral portion of the microvoid.

18. A semiconductor device comprising:

an oxide semiconductor film including a channel region, a source region, and a drain region;

a gate insulating film over the oxide semiconductor film;

a gate electrode overlapping with the channel region with the gate insulating film provided therebetween;

an interlayer insulating film over the gate insulating film and the gate electrode; and

a pair of electrodes over the interlayer insulating film,

wherein the gate insulating film and the interlayer insulating film include opening portions exposing the source region and the drain region,

wherein the pair of electrodes is in contact with the source region and the drain region through the opening portions, and

wherein densities of the source region and the drain region are lower than a density of the channel region.

19. A semiconductor device according to claim 18,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

20. A semiconductor device according to claim 19,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

21. A semiconductor device according to claim 18,

wherein the source region and the drain region include a microvoid.

22. A semiconductor device according to claim 21,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than the outside of the microvoid includes.

23. A semiconductor device according to claim 21,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

24. A semiconductor device according to claim 21,

wherein a crystal portion is included in contact with a peripheral portion of the microvoid.

25. A semiconductor device comprising:

a gate electrode;

a gate insulating film covering the gate electrode;

an oxide semiconductor film overlapping with the gate electrode with the gate insulating film interposed therebetween and including a channel region, a source region, and a drain region;

an interlayer insulating film including opening portions exposing the source region and the drain region and provided over the gate insulating film and the oxide semiconductor film; and

a pair of electrodes being in contact with the oxide semiconductor film through the opening portions,

wherein densities of the source region and the drain region are lower than a density of the channel region.

26. A semiconductor device according to claim 25,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

27. A semiconductor device according to claim 26,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

28. A semiconductor device according to claim 25,

wherein the source region and the drain region include a microvoid.

29. A semiconductor device according to claim 28,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than the outside of the microvoid includes.

30. A semiconductor device according to claim 28,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

31. A semiconductor device according to claim 28,

wherein a crystal portion is included in contact with a peripheral portion of the microvoid.

32. A semiconductor device comprising:

an oxide semiconductor film;

a pair of electrodes being partly in contact with the oxide semiconductor film;

a gate insulating film over the oxide semiconductor film; and

a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween, and not overlapping with the pair of electrodes,

wherein a density of a region in the oxide semiconductor film, which does not overlap with the pair of electrodes and the gate electrode is lower than densities of regions overlapping with the pair of electrodes or the gate electrode.

33. A semiconductor device according to claim 32,

wherein the source region and the drain region contain hydrogen having a concentration higher than or equal to 1×

10²⁰ cm<sup>−

3</sup> and lower than or equal to 3×

10²² cm<sup>−

3</sup>.

34. A semiconductor device according to claim 33,

wherein a hydrogen concentration in the channel region is lower than 5×

10¹⁸ cm<sup>−

3</sup>.

35. A semiconductor device according to claim 32,

wherein the source region and the drain region include a microvoid.

36. A semiconductor device according to claim 35,

wherein the microvoid includes at least one of nitrogen, hydrogen, and oxygen more than the outside of the microvoid includes.

37. A semiconductor device according to claim 35,

wherein a diameter of the microvoid is larger than or equal to 0.1 nm and smaller than or equal to 10 nm.

38. A semiconductor device according to claim 35,

wherein a crystal portion is included in contact with a peripheral portion of the microvoid.

39. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film;

forming a pair of electrodes being partly in contact with the oxide semiconductor film;

forming an interlayer insulating film over the oxide semiconductor film and the pair of electrodes; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the interlayer insulating film.

40. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming a pair of electrodes over the gate insulating film;

forming an oxide semiconductor film being partly in contact with the pair of electrodes and provided over the pair of electrodes;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film;

forming an interlayer insulating film over the oxide semiconductor film and the pair of electrodes; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the interlayer insulating film.

41. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film over a substrate;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film;

forming a pair of electrodes being partly in contact with the oxide semiconductor film;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the gate electrode.

42. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a pair of electrodes over a substrate;

forming an oxide semiconductor film being partly in contact with the pair of electrodes and provided over the pair of electrodes;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the gate electrode.

43. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film over a substrate;

forming a gate insulating film over the oxide semiconductor film;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film using the gate electrode as a mask;

forming an interlayer insulating film over the gate insulating film and the gate electrode;

forming an opening portion exposing the oxide semiconductor film in the gate electrode and the interlayer insulating film;

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C.; and

forming a pair of electrodes being in contact with the oxide semiconductor film through the opening portion.

44. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to a part of the oxide semiconductor film;

forming an interlayer insulating film over the gate insulating film and the oxide semiconductor film;

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C.;

forming an opening portion exposing the oxide semiconductor film to the interlayer insulating film; and

forming a pair of electrodes being in contact with the oxide semiconductor film through the opening portion.

45. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film and a pair of electrodes being partly in contact with the oxide semiconductor film;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed between, and not overlapping with the pair of electrodes;

forming a microvoid by adding any one or more of nitrogen, oxygen, and hydrogen to part of the oxide semiconductor film using the pair of electrodes and the gate electrode as a mask; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C.

46. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film;

forming a pair of electrodes being partly in contact with the region where the density of the oxide semiconductor film is reduced;

forming an interlayer insulating film over the oxide semiconductor film and the pair of electrodes; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the interlayer insulating film, so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced.

47. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming a pair of electrodes over the gate insulating film;

forming an oxide semiconductor film being partly in contact with the pair of electrodes and provided over the pair of electrodes;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film;

forming an interlayer insulating film over the oxide semiconductor film and the pair of electrodes; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the interlayer insulating film, so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced.

48. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film over a substrate;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film;

forming a pair of electrodes being partly in contact with the region where the density of the oxide semiconductor film is reduced;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the gate electrode, so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced.

49. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a pair of electrodes over a substrate;

forming an oxide semiconductor film being partly in contact with the pair of electrodes and provided over the pair of electrodes;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film;

forming a gate insulating film over the oxide semiconductor film and the pair of electrodes;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween; and

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C. after forming the gate electrode, so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced.

50. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming an oxide semiconductor film over a substrate;

forming a gate insulating film over the oxide semiconductor film;

forming a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film using the gate electrode as a mask;

forming an interlayer insulating film over the gate insulating film and the gate electrode;

forming an opening portion exposing the oxide semiconductor film in the gate electrode and the interlayer insulating film;

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C., so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced; and

forming a pair of electrodes being in contact with the oxide semiconductor film through the opening portion.

51. A manufacturing method of a semiconductor device, the method comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film covering the gate electrode;

forming an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween;

reducing a density of a region of the oxide semiconductor film by performing ion implantation to the region of the oxide semiconductor film;

forming an interlayer insulating film over the gate insulating film and the oxide semiconductor film;

performing heat treatment at a temperature higher than or equal to 200°

C. and lower than or equal to 700°

C., so that hydrogen is captured in the region where the density of the oxide semiconductor film is reduced;

forming an opening portion exposing the oxide semiconductor film to the interlayer insulating film after capturing hydrogen in the region where the density is reduced; and

forming a pair of electrodes being in contact with the oxide semiconductor film through the opening portion.