SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD
First Claim
1. A semiconductor light-emitting device comprising:
- a base board having a mounting surface and a conductor pattern located adjacent the mounting surface;
at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps;
a wavelength converting layer having a top surface and a side surface, the wavelength converting layer including at least one phosphor, and encapsulating the at least one semiconductor light-emitting chip so as to surround the solder bumps along with the mounting surface of the base board;
a transparent plate having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, and disposed adjacent the top surface of the wavelength converting layer, wherein the side surface of the transparent plate is substantially aligned with the side surface of the wavelength converting layer;
a frame located adjacent the mounting surface of the base board so as to surround the wavelength converting layer and the transparent plate;
a reflective material layer having a top surface and an end of the top surface, disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate so that the end of the top surface of the reflective material layer contacts with the side surface of the transparent plate, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape;
a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer.
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Accused Products
Abstract
A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer. A wavelength-converted light that is emitted can have a high light-emitting efficiency and a high contrast between a light-emitting and non-light-emitting surface from a small light-emitting surface.
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Citations
20 Claims
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1. A semiconductor light-emitting device comprising:
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a base board having a mounting surface and a conductor pattern located adjacent the mounting surface; at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; a wavelength converting layer having a top surface and a side surface, the wavelength converting layer including at least one phosphor, and encapsulating the at least one semiconductor light-emitting chip so as to surround the solder bumps along with the mounting surface of the base board; a transparent plate having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, and disposed adjacent the top surface of the wavelength converting layer, wherein the side surface of the transparent plate is substantially aligned with the side surface of the wavelength converting layer; a frame located adjacent the mounting surface of the base board so as to surround the wavelength converting layer and the transparent plate; a reflective material layer having a top surface and an end of the top surface, disposed between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent plate so that the end of the top surface of the reflective material layer contacts with the side surface of the transparent plate, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape; a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer. - View Dependent Claims (2, 5, 8, 11, 12, 13, 16, 17, 18)
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3. A semiconductor light-emitting device, comprising:
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a base board having a mounting surface and a conductor pattern located adjacent the mounting surface; at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; a wavelength converting layer having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, the wavelength converting layer including at least one phosphor, and located over the top surface of the at least one semiconductor light-emitting chip so that the bottom surface of the wavelength converting layer covers the top surface of the at least one semiconductor light-emitting chip; a transparent material layer having a side surface disposed between the bottom surface of the wavelength converting layer and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the transparent material layer extends from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer; a frame located adjacent the mounting surface of the base board so as to surround the at least one semiconductor light-emitting chip, the transparent material layer and the wavelength converting layer; a reflective material layer having a top surface, a side slant surface and an end of the top surface, disposed at least between the frame and both the side surface of the wavelength converting layer and the side surface of the transparent material layer and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, the side slant surface of the reflective material layer contacting with the side surface of the transparent material layer and extending from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the wavelength converting layer, the end of the top surface of the reflective material layer contacting with the side surface of the wavelength converting layer, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape; and a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer. - View Dependent Claims (6, 9, 14, 19)
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4. A semiconductor light-emitting device, comprising:
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a base board having a mounting surface and a conductor pattern located adjacent the mounting surface; at least one semiconductor light-emitting chip having a top surface, a side surface and a bottom surface, and including chip electrodes adjacent the bottom surface, each of the chip electrodes electrically connected to a respective portion of the conductor pattern of the base board via solder bumps; a transparent plate having a top surface, a side surface, a bottom surface and an edge portion located between the top surface and the side surface, and located over the top surface of the at least one semiconductor light-emitting chip so that the bottom surface of the transparent plate covers the top surface of the at least one semiconductor light-emitting chip; a wavelength converting layer having a side surface and including at least one phosphor, the wavelength converting layer disposed between the bottom surface of the transparent plate and the side surface of the at least one semiconductor light-emitting chip so that the side surface of the wavelength converting layer extends from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the transparent plate; a frame located adjacent the mounting surface of the base board so as to surround the at least one semiconductor light-emitting chip, the wavelength converting layer and the transparent plate; a reflective material layer having a top surface, a side slant surface and an end of the top surface, disposed at least between the frame and both the side surface of the transparent plate and the side surface of the wavelength converting layer and between the bottom surface of the at least one semiconductor light-emitting chip and the mounting surface of the base board while surrounding the solder bumps, the side slant surface of the reflective material layer contacting with the side surface of the wavelength converting layer and extending from the side surface of the at least one semiconductor light-emitting chip toward the bottom surface of the transparent plate, the end of the top surface of the reflective material layer contacting with the side surface of the transparent plate, and the top surface of the reflective material layer including one of a concave meniscus shape and a convex meniscus shape; and a light-absorbing layer having a top surface and an end of the top surface, and disposed on the one of the concave meniscus shape and the convex meniscus shape of the reflective material layer, wherein the end of the top surface of the light-absorbing layer contacts with the side surface of the transparent plate at a position that is higher relative to the base board than the end of the top surface of the reflective material layer. - View Dependent Claims (7, 10, 15, 20)
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Specification