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Methods of Fabricating Semiconductor Devices

  • US 20120238093A1
  • Filed: 03/13/2012
  • Published: 09/20/2012
  • Est. Priority Date: 03/15/2011
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, the method comprising:

  • forming a stacked structure of alternatingly deposited sacrificial layers and insulating layers on an upper surface of a substrate, the upper surface extending in a first direction and a second direction that is substantially perpendicular to the first direction, the stacked structure extending in a third direction that is substantially perpendicular to the first direction and the second direction;

    forming a recess group that includes a plurality of first recesses that penetrate the sacrificial layers except a first one of the deposited sacrificial layer;

    forming a buried insulating layer group that includes buried insulating layers that are configured to substantially fill the plurality of first recesses;

    forming a contact plug group that includes contact plugs that are configured to penetrate an uppermost one of the insulating layers and the buried insulating layers;

    wherein forming the stacked structure includes forming 2n deposited sacrificial layers and 2n deposited insulating layers, wherein n is an integer that is greater than or equal to two, and wherein forming the recess group is performed by n quantity etch processes, each of the etch processes removing a portion of the stacked structure.

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