PLASMA PROCESSING APPARATUS

• US 20120241090A1
• Filed: 03/26/2012
• Published: 09/27/2012
• Est. Priority Date: 03/25/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsumoto, Naoki, Mihara, Naoki, Yoshimura, Shota, Yoshikawa, Jun, Yoshikawa, Wataru, Takahashi, Kazuki
• Application Number:
  US13/429,638
• Publication Number:
  US 20120241090A1
• Time in Patent Office: Days
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32651 Shields, e.g. dark space shields, Faraday shields

Abstract

A plasma processing apparatus includes a processing chamber; a gas supply unit for supplying a processing gas into the processing chamber; a microwave generator for generating microwave; an antenna for introducing the microwave for plasma excitation into the processing chamber; a coaxial waveguide provided between the microwave generator and the antenna; a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate; a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

Claims

1. A plasma processing apparatus comprising:

a processing chamber;

a gas supply unit for supplying a processing gas into the processing chamber;

a microwave generator for generating microwave;

an antenna for introducing the microwave for plasma excitation into the processing chamber;

a coaxial waveguide provided between the microwave generator and the antenna;

a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate;

a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and

a dielectric rod provided in a region between the holding unit and the dielectric window along the central axis line.

2. The plasma processing apparatus of claim 1,

wherein a distance between a leading end of the dielectric rod which faces the holding unit and the holding unit is smaller than or equal to about 95 mm.

3. The plasma processing apparatus of claim 1,

wherein a radius of the dielectric rod is greater than or equal to about 60 mm.

4. The plasma processing apparatus of claim 1,

wherein the gas supply unit is configured to supply the processing gas from the antenna side to the holding unit side along the central axis line;

and

the dielectric rod is provided with one or more holes through which the processing gas supplied from the gas supply unit passes, and the holes extend along the central axis line.

5. The plasma processing apparatus of claim 4,

wherein a metal film is formed on inner surfaces of the holes.

6. A plasma processing apparatus comprising:

a processing chamber;

a gas supply unit for supplying a processing gas into the processing chamber;

a microwave generator for generating microwave;

an antenna for introducing the microwave for plasma excitation into the processing chamber;

a coaxial waveguide provided between the microwave generator and the antenna;

a holding unit, disposed to face the antenna in a direction of a central axis line of the coaxial waveguide, for holding a processing target substrate;

a dielectric window, provided between the antenna and the holding unit, for transmitting the microwave from the antenna into the processing chamber; and

a circular plate provided in a region between the holding unit and the dielectric window along a plane perpendicular to the central axis line.

7. The plasma processing apparatus of claim 6,

wherein a distance between the circular plate and the holding unit is smaller than or equal to about 95 mm.

8. The plasma processing apparatus of claim 6,

wherein a radius of the circular plate is greater than or equal to about 60 mm.

9. The plasma processing apparatus of claim 6,

wherein the circular plate is supported by a dielectric rod that has a diameter smaller than a diameter of the circular plate and is provided along the central axis line.

10. The plasma processing apparatus of claim 9,

wherein the gas supply unit is configured to supply the processing gas from the antenna side to the holding unit side along the central axis line, and

the dielectric rod is provided with one or more holes through which the processing gas supplied from the gas supply unit passes, and the holes extend along the central axis line.

11. The plasma processing apparatus of claim 6,

wherein the gas supply unit is configured to supply the processing gas from the antenna side to the holding unit side along the central axis line, and

the circular plate is provided with a hole extending along the central axis line.

12. The plasma processing apparatus of claim 11,

wherein a diameter of the hole formed in the circular plate is smaller than or equal to about 60 mm.

13. The plasma processing apparatus of claim 6, further comprising:

a gas pipe, formed in an annular shape centered about the central axis line, having a plurality of gas discharge holes,

wherein the circular plate is supported by the gas pipe.

14. The plasma processing apparatus of claim 13, further comprising:

a plurality of supporting rods extending in a radial direction with respect to the central axis line and coupled to the gas pipe and the circular plate, the supporting rods being made of dielectric material.

15. The plasma processing apparatus of claim 14,

wherein a thickness of each of the supporting rods is smaller than or equal to about 5 mm.

16. The plasma processing apparatus of claim 13,

wherein the gas pipe is provided directly below the circular plate in a direction of the central axis line.

17. The plasma processing apparatus of claim 16,

wherein the gas pipe is provided along an outer periphery of the circular plate and is in contact with a bottom surface of the circular plate.

18. The plasma processing apparatus of claim 16,

wherein the gas discharge holes of the gas pipe are configured to discharge a gas downward.

19. The plasma processing apparatus of claim 13,

wherein a cross section of the gas pipe has a first width in a direction perpendicular to the central axis line and a second width in a direction parallel to the central axis line, and, the first width is larger than the second width or the second width is larger than the first width.

20. The plasma processing apparatus of claim 13, wherein the gas supply unit includes an injector base disposed in the dielectric window.