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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20120241736A1
  • Filed: 03/16/2012
  • Published: 09/27/2012
  • Est. Priority Date: 03/25/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • forming a gate electrode;

    forming a hydrogen capture film over the gate electrode;

    forming a hydrogen permeable film over the hydrogen capture film;

    forming an oxide semiconductor film over the hydrogen permeable film; and

    releasing hydrogen from the oxide semiconductor film by performing heat treatment.

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