SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20120241736A1
• Filed: 03/16/2012
• Published: 09/27/2012
• Est. Priority Date: 03/25/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: IMOTO, Yuki, MARUYAMA, Tetsunori, ENDO, Yuta
• Granted Patent: US 9,012,904 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a hydrogen capture film over the gate electrode;

forming a hydrogen permeable film over the hydrogen capture film;

forming an oxide semiconductor film over the hydrogen permeable film; and

releasing hydrogen from the oxide semiconductor film by performing heat treatment.

2. The method for manufacturing a semiconductor device, according to claim 1, after the hydrogen is released from the oxide semiconductor film, further comprising a step of forming a pair of electrodes over the oxide semiconductor film,

wherein the pair of electrodes is in contact with at least part of the oxide semiconductor film.

3. The method for manufacturing a semiconductor device, according to claim 1, after the hydrogen permeable film is formed and before the oxide semiconductor film is formed, further comprising a step of forming a pair of electrodes over the hydrogen permeable film.

4. The method for manufacturing a semiconductor device, according to claim 1, wherein the hydrogen capture film is an oxynitride film containing indium, and

wherein the hydrogen permeable film is a silicon oxide film or a silicon oxynitride film.

5. The method for manufacturing a semiconductor device, according to claim 1, wherein the hydrogen capture film includes indium, gallium, zinc and oxygen, and wherein the hydrogen permeable film includes indium, gallium, zinc, oxygen and nitride.

6. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor film;

forming a hydrogen permeable film over the oxide semiconductor film;

forming a hydrogen capture film over the hydrogen permeable film;

releasing hydrogen from the oxide semiconductor film by performing heat treatment; and

forming a gate electrode over the hydrogen capture film.

7. The method for manufacturing a semiconductor device, according to claim 6, after the oxide semiconductor film is formed and before the hydrogen permeable film is formed, further comprising a step of forming a pair of electrodes over the oxide semiconductor film,

wherein the pair of electrodes which is in contact with at least part of the oxide semiconductor film.

8. The method for manufacturing a semiconductor device, according to claim 6, wherein the hydrogen capture film is an oxynitride film containing indium, and

wherein the hydrogen permeable film is a silicon oxide film or a silicon oxynitride film.

9. The method for manufacturing a semiconductor device, according to claim 6, wherein the hydrogen capture film includes indium, gallium, zinc and oxygen, and wherein the hydrogen permeable film includes indium, gallium, zinc, oxygen and nitride.

10. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a first film over the gate electrode;

forming a second film over the first film;

forming an oxide semiconductor film over the second film; and

releasing hydrogen from the oxide semiconductor film by performing heat treatment.

11. The method for manufacturing a semiconductor device, according to claim 10, wherein the first film is an oxynitride film containing indium, and

wherein the second film is a silicon oxide film or a silicon oxynitride film.

12. The method for manufacturing a semiconductor device, according to claim 10, wherein the first film includes indium, gallium, zinc and oxygen, and

wherein the second film includes indium, gallium, zinc, oxygen and nitride.

13. A semiconductor device comprising:

a gate electrode;

a hydrogen capture film over the gate electrode;

a hydrogen permeable film over the hydrogen capture film;

an oxide semiconductor film over the hydrogen permeable film; and

a pair of electrodes over the oxide semiconductor film,

wherein the pair of electrodes is in contact with at least part of the oxide semiconductor film.

14. The semiconductor device according to claim 13, wherein the hydrogen capture film is an oxynitride film containing indium, and

wherein the hydrogen permeable film is a silicon oxide film or a silicon oxynitride film.

15. The semiconductor device according to claim 13, wherein the hydrogen capture film includes indium, gallium, zinc and oxygen, and

wherein the hydrogen permeable film includes indium, gallium, zinc, oxygen and nitride.

16. The semiconductor device according to claim 13, wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

17. A semiconductor device comprising:

an oxide semiconductor film;

a pair of electrodes over the oxide semiconductor film;

a hydrogen permeable film over the oxide semiconductor film and the pair of electrodes;

a hydrogen capture film over the hydrogen permeable film; and

a gate electrode over the hydrogen capture film.

18. The semiconductor device according to claim 17, wherein the hydrogen capture film is an oxynitride film containing indium, and

wherein the hydrogen permeable film is a silicon oxide film or a silicon oxynitride film.

19. The semiconductor device according to claim 17, wherein the hydrogen capture film includes indium, gallium, zinc and oxygen, and

wherein the hydrogen permeable film includes indium, gallium, zinc, oxygen and nitride.

20. The semiconductor device according to claim 17, wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

21. A semiconductor device comprising:

a gate electrode;

a first film over the gate electrode;

a second film over the first film;

an oxide semiconductor film over the second film; and

a pair of electrodes over the oxide semiconductor film,

wherein the pair of electrodes is in contact with at least part of the oxide semiconductor film.

22. The semiconductor device according to claim 21, wherein the first film is a hydrogen capture film, and the second film is a hydrogen permeable film.

23. The semiconductor device according to claim 21, wherein the first film is an oxynitride film containing indium, and

wherein the second film is a silicon oxide film or a silicon oxynitride film.

24. The semiconductor device according to claim 21, wherein the first film includes indium, gallium, zinc and oxygen, and

wherein the second film includes indium, gallium, zinc, oxygen and nitride.

25. The semiconductor device according to claim 21, wherein a thickness of the second film is less than or equal to 5 nm.