SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20120241737A1
• Filed: 03/16/2012
• Published: 09/27/2012
• Est. Priority Date: 03/25/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: IMOTO, Yuki, MARUYAMA, Tetsunori, ENDO, Yuta
• Granted Patent: US 8,956,944 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In the transistor including an oxide semiconductor film, which includes a film for capturing hydrogen from the oxide semiconductor film (a hydrogen capture film) and a film for diffusing hydrogen (a hydrogen permeable film), hydrogen is transferred from the oxide semiconductor film to the hydrogen capture film through the hydrogen permeable film by heat treatment. Specifically, a base film or a protective film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

forming a base film over a substrate;

forming an oxide semiconductor film over the base film;

performing a heat treatment so as to release hydrogen from the oxide semiconductor film;

forming a pair of electrodes over and in contact with at least part of the oxide semiconductor film;

forming a gate insulating film over the oxide semiconductor film; and

forming a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween,

wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order.

2. The method for manufacturing a semiconductor device according to claim 1,

wherein the hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.

3. The method for manufacturing a semiconductor device according to claim 1,

wherein the hydrogen permeable film comprises an oxide film, and

wherein oxygen is transferred from the hydrogen permeable film to the oxide semiconductor film by performing the heat treatment.

4. The method for manufacturing a semiconductor device according to claim 1,

wherein the hydrogen capture film and the oxide semiconductor film comprise at least a metal element, and

wherein the hydrogen permeable film does not include the metal element.

5. The method for manufacturing a semiconductor device according to claim 1,

wherein the hydrogen capture film comprises an oxynitride film containing indium, and

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

6. The method for manufacturing a semiconductor device according to claim 1,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the hydrogen capture film comprises an In—

Ga—

Zn—

O—

N based film.

7. The method for manufacturing a semiconductor device according to claim 1,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

8. The method for manufacturing a semiconductor device according to claim 1,

wherein a temperature of the heat treatment is higher than 450°

C. and lower than a strain point of the substrate.

9. The method for manufacturing a semiconductor device according to claim 1,

wherein a hydrogen concentration in the hydrogen capture film is greater than or equal to 1×

10¹⁹ cm<sup>−

3</sup> and less than or equal to 5×

10²⁰ cm<sup>−

3</sup> after the heat treatment.

10. A method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

adding an impurity to the part of the oxide semiconductor film.

11. A method for manufacturing a semiconductor device comprising the steps of:

forming a gate electrode over a substrate;

forming a gate insulating film so as to cover the gate electrode;

forming an oxide semiconductor film over the gate insulating film;

forming a pair of electrodes over the oxide semiconductor film, the pair of electrodes being in contact with at least part of the oxide semiconductor film;

forming a protective film over the oxide semiconductor film and the pair of electrodes; and

performing heat treatment so as to release hydrogen from the oxide semiconductor film,

wherein the protective film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order.

12. The method for manufacturing a semiconductor device according to claim 11,

wherein the hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment

13. The method for manufacturing a semiconductor device according to claim 11,

wherein the hydrogen permeable film comprises an oxide film, and

wherein oxygen is transferred from the hydrogen permeable film to the oxide semiconductor film by performing the heat treatment.

14. The method for manufacturing a semiconductor device according to claim 11,

wherein the hydrogen capture film and the oxide semiconductor film comprise at least a metal element, and

wherein the hydrogen permeable film does not include the metal element.

15. The method for manufacturing a semiconductor device according to claim 11,

wherein the hydrogen capture film comprises an oxynitride film containing indium.

16. The method for manufacturing a semiconductor device according to claim 11,

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

17. The method for manufacturing a semiconductor device according to claim 11,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the hydrogen capture film comprises an In—

Ga—

Zn—

O—

N based film.

18. The method for manufacturing a semiconductor device according to claim 11,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

19. The method for manufacturing a semiconductor device according to claim 11,

wherein a temperature of the heat treatment is higher than 450°

C. and lower than a strain point of the substrate.

20. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film over a substrate;

forming an oxide semiconductor film over the first insulating layer;

forming a pair of electrodes over and in contact with at least part of the oxide semiconductor film;

forming a second insulating film over the oxide semiconductor film and the pair of electrodes; and

performing a heat treatment,

wherein one of the first insulating film and the second insulating film comprises a third insulating film and a fourth insulating film which are stacked, the third insulating film being adjacent to the oxide semiconductor film,

wherein the hydrogen is transferred from the oxide semiconductor film to the fourth insulating film through the third insulating film by the heat treatment,

wherein the hydrogen is captured by the fourth insulating film.

21. The method for manufacturing a semiconductor device according to claim 20,

wherein the third insulating film comprises an oxide film, and

wherein oxygen is transferred from the third insulating film to the oxide semiconductor film by performing the heat treatment.

22. The method for manufacturing a semiconductor device according to claim 20,

wherein the fourth insulating film and the oxide semiconductor film comprise at least a metal element, and

wherein the third insulating film does not include the metal element.

23. The method for manufacturing a semiconductor device according to claim 20,

wherein the fourth insulating film comprises an oxynitride film containing indium.

24. The method for manufacturing a semiconductor device according to claim 20,

wherein the third insulating film comprises a silicon oxide film or a silicon oxynitride film.

25. The method for manufacturing a semiconductor device according to claim 20,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the fourth insulating film comprises an In—

Ga—

Zn—

O—

N based film.

26. The method for manufacturing a semiconductor device according to claim 20,

wherein a thickness of the third insulating film is less than or equal to 5 nm.

27. The method for manufacturing a semiconductor device according to claim 20,

wherein a temperature of the heat treatment is higher than 450°

C. and lower than a strain point of the substrate.

28. A semiconductor device comprising:

a base film;

an oxide semiconductor film over the base film;

a gate insulating film over the oxide semiconductor film;

a gate electrode over the oxide semiconductor film with the gate insulating film provided therebetween; and

a pair of electrodes in contact with at least part of the oxide semiconductor film,

wherein the base film comprises a hydrogen capture film and a hydrogen permeable film which are stacked in this order.

29. The semiconductor device according to claim 28,

wherein the hydrogen capture film comprises an oxynitride film including indium, and

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

30. The semiconductor device according to claim 28,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the hydrogen capture film comprises an In—

Ga—

Zn—

O—

N based film.

31. The semiconductor device according to claim 28,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

32. The semiconductor device according to claim 28,

wherein the hydrogen permeable film is configured to transfer oxygen to the oxide semiconductor film by a heat treatment.

33. A semiconductor device comprising:

a gate electrode;

a gate insulating film covering the gate electrode;

an oxide semiconductor film over the gate electrode with the gate insulating film provided therebetween;

a pair of electrodes in contact with at least part of the oxide semiconductor film, and

a protective film over the oxide semiconductor film,

wherein the protective film comprises a hydrogen permeable film and a hydrogen capture film which are stacked in this order.

34. The semiconductor device according to claim 33,

wherein the hydrogen capture film comprises an oxynitride film including indium, and

wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

35. The semiconductor device according to claim 33,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the hydrogen capture film comprises an In—

Ga—

Zn—

O—

N based film.

36. The semiconductor device according to claim 33,

wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

37. The semiconductor device according to claim 33,

wherein the hydrogen permeable film is configured to transfer oxygen to the oxide semiconductor film by a heat treatment.

38. A semiconductor device comprising:

a first insulating film;

an oxide semiconductor film over the first insulating layer;

a pair of electrodes over and in contact with at least part of the oxide semiconductor film; and

a second insulating film over the oxide semiconductor film and the pair of electrodes;

wherein one of the first insulating film and the second insulating film comprises a third insulating film and a fourth insulating film which are stacked, the third insulating film being adjacent to the oxide semiconductor film,

wherein the third insulating film and the fourth insulating film are configured to transfer hydrogen from the oxide semiconductor film to the fourth insulating film through the third insulating film by a heat treatment,

wherein the hydrogen is captured by the fourth insulating film.

39. The semiconductor device according to claim 38,

wherein the fourth insulating film comprises an oxynitride film including indium, and,

wherein the third insulating film comprises a silicon oxide film or a silicon oxynitride film.

40. The semiconductor device according to claim 38,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O based film, and

wherein the fourth insulating film comprises an In—

Ga—

Zn—

O—

N based film.

41. The semiconductor device according to claim 38,

wherein a thickness of the third insulating film is less than or equal to 5 nm.

42. The semiconductor device according to claim 38,

wherein the third insulating film is configured to transfer oxygen to the oxide semiconductor film by a heat treatment.