SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20120241738A1
• Filed: 03/16/2012
• Published: 09/27/2012
• Est. Priority Date: 03/25/2011
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: IMOTO, Yuki, MARUYAMA, Tetsunori, ENDO, Yuta
• Granted Patent: US 9,472,676 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 59/125 including organic TFTs [OTFT]

Abstract

A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a gate insulating film to cover the gate electrode;

forming an oxide semiconductor film over the gate insulating film;

forming a first film having a hydrogen permeable property over the oxide semiconductor film;

forming a second film having a hydrogen capture property over the first film;

performing heat treatment;

forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and

removing a part of the second film overlapping with a channel formation region in the oxide semiconductor film.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the first film contains an oxide.

3. The method for manufacturing a semiconductor device according to claim 1, wherein hydrogen in the oxide semiconductor film is released by the heat treatment.

4. The method for manufacturing a semiconductor device according to claim 1,

wherein a metal element included in the second film as a main component and a metal element included in the oxide semiconductor film as a main component are the same, and

wherein the first film does not include the metal element as a main component.

5. The method for manufacturing a semiconductor device according to claim 1,

wherein the first film comprises a silicon oxide film or a silicon oxynitride film, and

wherein the second film comprises an oxynitride film containing indium.

6. The method for manufacturing a semiconductor device according to claim 5,

wherein the oxide semiconductor film is an In—

Ga—

Zn—

O film, and

wherein the oxynitride film containing indium is an In—

Ga—

Zn—

O—

N film.

7. The method for manufacturing a semiconductor device according to claim 5, wherein a thickness of the silicon oxide film or the silicon oxynitride film is less than or equal to 5 nm.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a gate insulating film to cover the gate electrode;

forming an oxide semiconductor film over the gate insulating film;

forming a channel protective film having a hydrogen permeable property over the oxide semiconductor film;

forming a film having a hydrogen capture property in contact with a part of the oxide semiconductor film;

performing heat treatment;

forming a conductive film; and

removing a part of the conductive film and a part of the film having a hydrogen capture property which overlap with a channel formation region in the oxide semiconductor film.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the channel protective film contains an oxide.

10. The method for manufacturing a semiconductor device according to claim 8, wherein hydrogen in the oxide semiconductor film is released by the heat treatment.

11. The method for manufacturing a semiconductor device according to claim 8,

wherein a metal element included in the film having a hydrogen capture property as a main component and a metal element included in the oxide semiconductor film as a main component are the same, and

wherein the channel protective film does not include the metal element as a main component.

12. The method for manufacturing a semiconductor device according to claim 8,

wherein the channel protective film comprises a silicon oxide film or a silicon oxynitride film, and

wherein the film having a hydrogen capture property comprises an oxynitride film containing indium.

13. The method for manufacturing a semiconductor device according to claim 12,

wherein the oxide semiconductor film is an In—

Ga—

Zn—

O film, and

wherein the oxynitride film containing indium is an In—

Ga—

Zn—

O—

N film.

14. The method for manufacturing a semiconductor device according to claim 12, wherein a thickness of the silicon oxide film or the silicon oxynitride film is less than or equal to 5 nm.

15. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film;

a channel protective film having a hydrogen permeable property over the oxide semiconductor film;

a film having a hydrogen capture property in contact with a part of the channel protective film; and

a source electrode and a drain electrode in contact with a part of the channel protective film, a part of the film having a hydrogen capture property, and a part of the oxide semiconductor film.

16. The semiconductor device according to claim 15, wherein the channel protective film contains an oxide.

17. The semiconductor device according to claim 15,

wherein a metal element included in the film having a hydrogen capture property as a main component and a metal element included in the oxide semiconductor film as a main component are the same, and

wherein the channel protective film does not include the metal element as a main component.

18. The semiconductor device according to claim 15,

wherein the channel protective film comprises a silicon oxide film or a silicon oxynitride film, and

wherein the film having a hydrogen capture property comprises an oxynitride film containing indium.

19. The semiconductor device according to claim 18,

wherein the oxide semiconductor film is an In—

Ga—

Zn—

O film, and

wherein the oxynitride film containing indium is an In—

Ga—

Zn—

O—

N film.

20. The semiconductor device according to claim 18, wherein a thickness of the silicon oxide film or the silicon oxynitride film is less than or equal to 5 nm.

21. A semiconductor device comprising:

a gate electrode;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film;

a channel protective film having a hydrogen permeable property over the oxide semiconductor film;

a film having a hydrogen capture property in contact with a part of the channel protective film, a part of the oxide semiconductor film, and a part of the gate insulating film; and

a source electrode and a drain electrode in contact with a part of the film having a hydrogen capture property.

22. The semiconductor device according to claim 21, wherein the channel protective film contains an oxide.

23. The semiconductor device according to claim 21,

wherein a metal element included in the film having a hydrogen capture property as a main component and a metal element included in the oxide semiconductor film as a main component are the same, and

wherein the channel protective film does not include the metal element as a main component.

24. The semiconductor device according to claim 21,

wherein the channel protective film comprises a silicon oxide film or a silicon oxynitride film, and

wherein the film having a hydrogen capture property comprises an oxynitride film containing indium.

25. The semiconductor device according to claim 24,

wherein the oxide semiconductor film is an In—

Ga—

Zn—

O film, and

wherein the oxynitride film containing indium is an In—

Ga—

Zn—

O—

N film.

26. The semiconductor device according to claim 24, wherein a thickness of the silicon oxide film or the silicon oxynitride film is less than or equal to 5 nm.