SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20120241760A1
• Filed: 12/02/2010
• Published: 09/27/2012
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK
• Inventors: Okabe, Takehiko
• Granted Patent: US 8,779,441 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Disclosed is a semiconductor light emitting element (1) which is provided with: a laminated semiconductor layer which is formed on a substrate, and in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type; a first electrode (first electrode (170)) which is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and has a first opening (170a) used for electrical connection with an outside; and a second electrode (second electrode (180)) which is formed on a surface of the second semiconductor layer, and has a second opening (180a) used for electrical connection with the outside. The surface of the second semiconductor layer is exposed by cutting off a part of the laminated semiconductor layer. The first opening (170a) has, on the second opening (180a) side of the first opening (170a) in a planar view, an arc portion which is formed to keep approximately equal distance from an outer edge portion of the second opening (180). With such a semiconductor light emitting element, workability and heat dissipation effects in the FC (flip-chip bonding) mounting technology of the semiconductor light emitting element are improved.

Claims

1. A semiconductor light emitting element comprising:

a laminated semiconductor layer that is formed on a substrate and in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type are laminated;

a first electrode that is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and that has a first opening used for electrical connection with an outside; and

a second electrode that is formed on a surface of the second semiconductor layer, and that has a second opening used for electrical connection with the outside, the surface of the second semiconductor layer being exposed by cutting off a part of the laminated semiconductor layer, wherein,

the first opening has, on a second opening side, an arc portion that is formed to keep an approximately equal distance from an outer edge portion of the second opening in a planar view.

2. The semiconductor light emitting element according to claim 1, wherein

a planar shape of the substrate is a rectangle or a square;

and

the arc portion of the first opening is formed to keep a distance having a length corresponding to at least 10% of a short side of the substrate, from the outer edge portion of the second opening.

3. The semiconductor light emitting element according to claim 1, wherein an area of the first opening is at least 30% of a surface area of the first electrode.

4. The semiconductor light emitting element according to claim 1, wherein the second electrode has at least one branch portion branched to get along an outer peripheral edge of the substrate in a planer view.

5. The semiconductor light emitting element according to claim 1, wherein the second electrode has at least one branch portion formed on the surface of the second semiconductor layer, the surface of the second semiconductor layer being exposed by cutting off a part of the laminated semiconductor layer in a diagonal direction of the substrate in a planar view.

6. The semiconductor light emitting element according to claim 1, wherein the laminated semiconductor layer is composed of a group III nitride semiconductor.

7. The semiconductor light emitting element according to claim 1, further comprising:

a first connector that is formed at the first opening of the first electrode, has a conductive property, and is used for electrical connection between the first electrode and the outside; and

a second connector that is formed at the second opening of the second electrode, has a conductive property, and is used for electrical connection between the second electrode and the outside.

8. The semiconductor light emitting element according to claim 1, wherein the substrate has optical transparency.

9. The semiconductor light emitting element according to claim 1, wherein the substrate is composed of sapphire.

10. A semiconductor light emitting device comprising:

a semiconductor light emitting element that comprises;

a laminated semiconductor layer in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type are laminated in order;

a first electrode that is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and that has a first opening used for electrical connection with an outside; and

a second electrode that is formed on a surface of the second semiconductor layer, and that has a second opening used for electrical connection with the outside, the surface of the second semiconductor layer being exposed by cutting off a part of the laminated semiconductor layer, wherein

the first opening has, on a second opening side, an arc portion that is formed to keep an approximately equal distance from an outer edge portion of the second opening in a planar view; and

a circuit board that is arranged so as to face a side where the first electrode and the second electrode of the semiconductor light emitting element are provided, and has a pair of wiring connected by a connector to each of the first electrode and the second electrode.