LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME

• US 20120241793A1
• Filed: 03/20/2012
• Published: 09/27/2012
• Est. Priority Date: 03/22/2011
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: LEE, Kyu Ho, IN, Chi Hyun, PARK, Jun Yong, SUH, Dae Woong, CHAE, Jong Hyeon, KIM, Chang Hoon, LEE, Sung Hyun
• Granted Patent: US 10,074,778 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

Claims

1. A light emitting diode package, comprising:

a first substrate;

a light-emitting layer disposed on a surface of the first substrate and comprising a first type semiconductor layer, an active layer, and a second type semiconductor layer;

a first bump disposed on the first type semiconductor layer and a second bump disposed on the second type semiconductor layer;

a protective layer covering at least the light-emitting layer; and

a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

2. The light emitting diode package of claim 1, wherein the first substrate has a lateral inclination formed at a corner thereof.

3. The light emitting diode package of claim 1, further comprising a phosphor layer disposed on another surface of the first substrate.

4. The light emitting diode package of claim 3, wherein the first substrate has a pattern formed on the another surface thereof.

5. The light emitting diode package of claim 1, wherein the protective layer covers at least part of the first bump and covers at least part of the second bump.

6. The light emitting diode package of claim 1, wherein the protective layer exposes a portion of the first bump and the second bump.

7. The light emitting diode package of claim 1, further comprising another first bump disposed on the first type semiconductor layer.

8. The light emitting diode package of claim 1, further comprising:

a second substrate comprising a first electrode and a second electrode disposed on a surface of the second substrate, the first electrode and the second electrode corresponding to the first bump and the second bump pad, respectively; and

a conductive adhesive material electrically connecting the first bump pad and the second bump pad to the first electrode and the second electrode, respectively.

9. The light emitting diode package of claim 8, wherein the conductive adhesive material covers at least a part of the light-emitting layer.

10. The light emitting diode package of claim 8, wherein the conductive adhesive material covers at least a part of the protective layer.

11. The light emitting diode package of claim 8, wherein the conductive adhesive material covers at least a part of the first substrate.

12. The light emitting diode package of claim 8, wherein the conductive adhesive material comprises a first conductive adhesive material and a second conductive adhesive material, the first conductive adhesive material being electrically connected to the first bump pad, the second conductive adhesive material being electrically connected to the second bump pad, and the first conductive adhesive material and the second conductive material being spaced apart from each other.

13. The light emitting diode package of claim 1, further comprising a passivation layer disposed on the light-emitting layer and comprising a first opening exposing a portion of the first type semiconductor layer and a second opening exposing a portion of the second type semiconductor layer.

14. The light emitting diode package of claim 13, further comprising a first contact pad and a second contact pad disposed on the passivation layer, wherein the first contact pad contacts the first type semiconductor layer through the first opening and the second contact pad contacts the second type semiconductor layer through the second opening.

15. The light emitting diode package of claim 1, further comprising a first current spreading layer and a second current spreading layer disposed on the protective layer, wherein the first current spreading layer is disposed between the first bump and the first bump pad and a second current spreading layer is disposed between the second bump and the second bump pad.

16. A method of manufacturing a light emitting diode package, comprising:

forming a pattern on a first substrate;

sequentially forming a first type semiconductor layer, an active layer, and a second type semiconductor layer on a surface of the first substrate to form a light-emitting layer;

etching the first type semiconductor layer, the active layer, and the second type semiconductor layer to expose a portion of the first type semiconductor layer;

forming a first bump and a second bump on the first type semiconductor layer and the second type semiconductor layer, respectively;

covering at least a part of the light-emitting layer with a protective layer; and

forming a first bump pad and a second bump pad on the first bump and the second bump, respectively.

17. The method of claim 16, further comprising forming a lateral inclination at a corner of the first substrate.

18. The method of claim 16, further comprising forming a phosphor layer on another surface of the first substrate.

19. The method of claim 18, wherein phosphor layer is formed to cover at least part of the first bump and at least part of the second bump.

20. The method of claim 18, wherein the forming the phosphor layer comprises forming the phosphor layer to expose at least a portion of the first bump and a portion of the second bump.