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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

  • US 20120241856A1
  • Filed: 06/01/2012
  • Published: 09/27/2012
  • Est. Priority Date: 05/20/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a drain region of a field-effect transistor formed over a semiconductor substrate;

    a channel region of the field-effect transistor formed over the drain region;

    a source region of the field-effect transistor formed over the channel region;

    a trench reaching the drain region from an upper surface of the source region;

    a first insulating film formed in the trench and disposed at a lower part of the trench;

    a first gate electrode of the field-effect transistor formed over the first insulating film in the trench and disposed at the lower part of the trench;

    a second insulating film formed in the trench and disposed at a upper part of the trench; and

    a second gate electrode of the field-effect transistor formed over the second insulating film in the trench and disposed at the upper part of the trench,wherein a first lead-out part of the first gate electrode is formed in an outer peripheral portion of the trench and is electrically connected with the first gate electrode,wherein a second lead-out part of the second gate electrode is formed in the outer peripheral portion of the trench and is electrically connected with the second gate electrode,wherein a thickness of the first lead-out part is smaller than a thickness of the second lead-out part,wherein the first gate electrode and the first lead-out part include a first conductive film, respectively, andwherein the second gate electrode and the second lead-out part include a second conductive film, respectively.

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