METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

• US 20120241919A1
• Filed: 10/18/2010
• Published: 09/27/2012
• Est. Priority Date: 12/11/2009
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Mitani, Masahiro
• Granted Patent: US 8,759,951 B2
• Time in Patent Office: Days
• US Class Current: 257/623
• CPC Class Codes: H01L 21/26 Bombardment with radiation H01L21/3105 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 2221/68322 Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

The present invention provides a method for selectively transferring elements such as monocrystalline Si thin films or elements made of monocrystalline Si from a base substrate (100) onto an insulating substrate without the use of an intermediate substrate. The base substrate (first substrate) (100) in which the elements are formed is selectively irradiated with a laser having a multiphoton absorption wavelength. Thus, elements to be transferred out of the elements and corresponding thin films on the base substrate (100) are transferred onto a transfer destination substrate (second substrate) (200).

Claims

1. A method for manufacturing a semiconductor device,

the method comprising the steps of:

forming a first substrate by forming an island pattern of a plurality of elements disposed on a base substrate;

bonding the first substrate and a second substrate that is different from the first substrate via some of the plurality of elements; and

irradiating regions in which said some of the plurality of elements are provided with a laser having a wavelength that causes multiphoton absorption so as to separate said some of the plurality of elements from the first substrate and selectively transfer said some of the plurality of elements onto the second substrate.

2. The method according to claim 1, wherein said some of the plurality of elements that have been transferred form an island pattern in a matrix on the second substrate.

3. The method according to claim 2, wherein a pitch of the island pattern formed on the second substrate is an integer multiple of a pitch of the island pattern formed on the first substrate.

4. The method according to claim 1, wherein the laser irradiation is performed with respect to predetermined regions of the base substrate while a laser light source is being passed over a substrate surface or while a stage on which the substrate is mounted is being passed over the substrate surface.

5. The method according to claim 1, further comprising the step of forming a fragile layer inside the base substrate,

the laser irradiation is performed with respect to the fragile layer.

6. The method according to claim 5, wherein the fragile layer is formed by ion implantation or ion doping for introducing at least one of a hydrogen atom, a hydrogen molecule, a hydrogen ion, and a rare gas ion into the first substrate.

7. The method according to claim 1, further comprising the step of forming a light absorbing layer inside the base substrate

the laser irradiation is performed with respect to the light absorbing layer.

8. The method according to claim 7, wherein the light absorbing layer is formed by ion implantation or ion doping for introducing any one of boron, phosphorus, arsenic, gallium, indium, titanium, palladium, carbon, silicon, antimony, zinc, tellurium, and cadmium into the base substrate.

9. The method according to claim 1, wherein the laser irradiation is performed in a state in which a temperature of the base substrate is increased to a room temperature or higher.

10. The method according to claim 1, wherein the laser is any one of Nd:

YAG laser, Nd;

YVO4 laser, Nd;

YLF laser, and titanium-sapphire laser.

11. The method according to claim 1, wherein said some of the plurality of elements are separated from the first substrate by applying a mechanical force to a side surface of the base substrate.

12. The method according to claim 1, wherein the plurality of elements are semiconductor thin films, semiconductor elements, or parts of respective semiconductor elements.

13. The method according to claim 12, wherein the semiconductor elements are light-emitting elements, liquid crystal control elements, photoelectric conversion elements, piezoelectric elements, thin-film transistor elements, thin-film diode elements, resistive elements, switching elements, micro magnetic elements, or micro optical elements.

14. The method according to claim 12, wherein the plurality of elements are monocrystalline Si thin films or semiconductor elements which contain monocrystalline Si.

15. The method according to claim 1, wherein the laser irradiation is performed under conditions that a peak power density is 1×

10⁸ W/cm² or more and a pulse width is 1 μ

s or less.

16. The method according to claim 15, wherein the laser irradiation is performed under conditions that the peak power density falls in a range from 1×

10¹¹ W/cm² to 1×

10¹² W/cm² and the pulse width falls in a range from 1 ns to 200 ns.

17. The method according to claim 1, wherein the laser irradiation is performed under conditions that a peak power density is 1×

10⁸ W/cm² or more and a pulse width is 1 ns or less.

18. The method according to claim 1, wherein the base substrate is any one of a silicon substrate, SOI substrate, a sapphire substrate, a GaN substrate, and a GaAs substrate.

19. The method according to claim 1, wherein the second substrate is constituted by any of a glass substrate, a plastic substrate, and a film bonded to a supporting substrate.

20. A semiconductor device comprising:

an insulating substrate; and

elements provided on the insulating substrate,

the insulating substrate having projections provided at predetermined intervals,

the elements being formed directly on the projections by transferring the elements onto the insulating substrate in such a manner that top surfaces of the elements are in contact with the projections and rear surfaces of the elements face away from the projections.

21. (canceled)