METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
First Claim
1. A method for producing a group III nitride semiconductor light emitting element having a reflective film comprising Ag or an Ag alloy, comprising:
- a first step of forming a reflective film;
a second step of patterning a barrier metal film comprising a material having resistance to wet etching on the reflective film;
a third step of wet etching the reflective film using the barrier metal film as a mask; and
a fourth step of forming an insulating film on the barrier metal film.
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Accused Products
Abstract
A reflective film including Ag of an Ag alloy is patterned in a uniform thickness without decreasing reflectivity. The reflective film is formed on the entire surface of a first insulating film by sputtering, vacuum deposition or the like, and a barrier metal film having a given pattern is formed on the reflective film by a lift-off method. The reflective film is wet etched using a silver etching liquid. The barrier metal film is not wet etched by the silver etching liquid, and therefore functions as a mask, and the reflective film in a region on which the barrier metal film has been formed remains not etched. As a result, the reflective film having a desired patter can uniformly be formed on the first insulating film.
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Citations
10 Claims
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1. A method for producing a group III nitride semiconductor light emitting element having a reflective film comprising Ag or an Ag alloy, comprising:
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a first step of forming a reflective film; a second step of patterning a barrier metal film comprising a material having resistance to wet etching on the reflective film; a third step of wet etching the reflective film using the barrier metal film as a mask; and a fourth step of forming an insulating film on the barrier metal film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification