METHOD FOR PATTERNING A FULL METAL GATE STRUCTURE

• US 20120244693A1
• Filed: 03/22/2011
• Published: 09/27/2012
• Est. Priority Date: 03/22/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: LUONG, Vinh Hoang, KO, Akiteru
• Application Number:
  US13/053,216
• Publication Number:
  US 20120244693A1
• Time in Patent Office: Days
• US Class Current: 438/591
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/28247 passivation or protection of the electrode, e.g. using re-oxidation
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32138 pre- or post-treatments, e.g. anti-corrosion processes
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A method of patterning a gate structure on a substrate is described. The method includes preparing a metal gate structure on a substrate, wherein the metal gate structure includes a high dielectric constant (high-k) layer, a first gate layer formed on the high-k layer, and a second gate layer formed on the first gate layer, and wherein the first gate layer comprises one or more metal-containing layers. The method further includes preparing a mask layer with a pattern overlying the metal gate structure, transferring the pattern to the second gate layer, transferring the pattern to the first gate layer, and transferring the pattern in the first gate layer to the high-k layer, and prior to the transferring of the pattern to the high-k layer, passivating an exposed surface of the first gate layer using a nitrogen-containing and/or carbon-containing environment to reduce under-cutting of the first gate layer relative to the second gate layer, wherein the passivating is performed separately from or in addition to the transferring of the pattern to the first gate layer.

Claims

1. A method of patterning a gate structure on a substrate, comprising:

preparing a metal gate structure on a substrate, said metal gate structure including a high dielectric constant (high-k) layer, a first gate layer formed on said high-k layer, and a second gate layer formed on said first gate layer, said first gate layer comprising one or more metal-containing layers;

preparing a mask layer with a pattern overlying said metal gate structure;

transferring said pattern to said second gate layer;

transferring said pattern to said first gate layer;

transferring said pattern in said first gate layer to said high-k layer; and

prior to said transferring said pattern to said high-k layer, passivating an exposed surface of said first gate layer using a nitrogen-containing and/or carbon-containing environment to reduce under-cutting of said first gate layer relative to said second gate layer,

wherein said passivating is performed separately from or in addition to said transferring said pattern to said first gate layer.

2. The method of claim 1, wherein said second gate layer includes a tungsten-containing material.

3. The method of claim 1, wherein said second gate layer includes tungsten.

4. The method of claim 1, wherein said first gate layer includes one or more sub-layers, each of said one or more sub-layers containing a metal or a metal alloy.

5. The method of claim 4, wherein a first sub-layer of said first gate layer includes titanium or a titanium alloy.

6. The method of claim 1, wherein a second sub-layer of said first gate layer includes aluminum or an aluminum alloy.

7. The method of claim 6, wherein said high-k layer includes hafnium or lanthanum.

8. The method of claim 1, wherein said high-k layer comprises hafnium dioxide (HfO₂), hafnium silicate (HfSiO), or nitrided hafnium silicate (HfSiO(N)), or any combination of two or more thereof.

9. The method of claim 1, wherein said nitrogen-containing and/or carbon-containing environment comprises a nitrogen-containing plasma and/or carbon-containing plasma.

10. The method of claim 9, wherein said nitrogen-containing plasma contains as an incipient ingredient N₂, or NH₃, or a combination thereof.

11. The method of claim 9, wherein said carbon-containing plasma contains as an incipient ingredient a hydrocarbon-containing gas.

12. The method of claim 11, wherein said carbon-containing plasma contains as an incipient ingredient at least one of C₂H₄, CH₄, C₂H₂, C₂H₆, C₃H₄, C₃H₆, C₃H₈, C₄H₆, C₄H₈, C₄H₁₀, C₆H₈, C₆H₁₀, C₆H₆, C₆H₁₀, and C₆H₁₂.

13. The method of claim 1, further comprising:

selecting a substrate temperature less than about 250 degrees C. during said transferring said pattern to said high-k layer to reduce under-cutting of said first gate layer.

14. The method of claim 1, further comprising:

selecting a substrate temperature less than about 220 degrees C. during said transferring said pattern to said high-k layer to reduce under-cutting of said first gate layer.

15. The method of claim 1, wherein said pattern is transferred to said first gate layer using a halogen-containing gas containing one or more gases selected from a group consisting of Cl₂, HBr, and BCl₃.

16. The method of claim 1, wherein said pattern is transferred to said first gate layer using Cl₂, BCl₃, and Ar.

17. The method of claim 1, wherein said pattern is transferred to said high-k layer using a halogen-containing gas containing one or more gases selected from the group consisting of Cl₂, HBr, and BCl₃.

18. The method of claim 17, wherein said pattern is transferred to said high-k layer using a composition containing BCl₃ and He.

19. The method of claim 17, wherein said pattern is transferred to said high-k layer using a composition further containing a hydrocarbon gas and/or a nitrogen-containing gas.

20. A method of patterning a gate structure on a substrate, comprising:

preparing a metal gate structure on a substrate, said metal gate structure including a high-k layer, a metal alloy layer formed on said high-k layer, and a gate layer formed on said metal alloy layer, said metal alloy layer comprising an aluminum-alloy and/or titanium-alloy;

preparing a mask layer with a pattern overlying said metal gate structure;

transferring said pattern to said gate layer;

transferring said pattern to said metal alloy layer;

transferring said pattern in said metal alloy layer to said high-k layer; and

passivating an exposed surface of said metal alloy layer using a nitrogen-containing environment and/or carbon-containing environment to reduce under-cutting of said metal alloy layer relative to said gate layer.