SIDEWALL IMAGE TRANSFER PROCESS
First Claim
Patent Images
1. A method comprising:
- forming a set of sidewall spacers next to a plurality of mandrels, said set of sidewall spacers being directly on top of a hard-mask layer;
transferring image of at least a portion of said set of sidewall spacers to said hard-mask layer to form a device pattern; and
transferring said device pattern from said hard-mask layer to a substrate underneath said hard-mask layer.
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Abstract
An improved method of performing sidewall spacer imager transfer is presented. The method includes forming a set of sidewall spacers next to a plurality of mandrels, the set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of the set of sidewall spacers to the hard-mask layer to form a device pattern; and transferring the device pattern from the hard-mask layer to a substrate underneath the hard-mask layer.
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Citations
26 Claims
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1. A method comprising:
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forming a set of sidewall spacers next to a plurality of mandrels, said set of sidewall spacers being directly on top of a hard-mask layer; transferring image of at least a portion of said set of sidewall spacers to said hard-mask layer to form a device pattern; and transferring said device pattern from said hard-mask layer to a substrate underneath said hard-mask layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of performing sidewall spacer image transfer, said method comprising:
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forming a set of sidewall spacers next to a set of mandrels respectively, said set of sidewall spacers being directly on top of a second hard-mask layer; transferring image of at least a portion of said set of sidewall spacers to said second hard-mask layer to form a device pattern; and transferring said device pattern from said second hard-mask layer to a first hard-mask layer and subsequently to a substrate underneath said first hard-mask layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method of transferring sidewall spacer image comprising:
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forming a set of sidewall spacers next to sidewalls of a corresponding set of mandrels, said set of sidewall spacers being directly on top of a second hard-mask layer; transferring image of a portion of said set of sidewall spacers to said second hard-mask layer to form a device pattern; transferring said device pattern from said second hard-mask layer to a first hard-mask layer; and transferring said device pattern from said first hard-mask layer subsequently to a substrate underneath said first hard-mask layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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Specification