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INCREASING MASKING LAYER ETCH RATE AND SELECTIVITY

  • US 20120248061A1
  • Filed: 03/30/2011
  • Published: 10/04/2012
  • Est. Priority Date: 03/30/2011
  • Status: Abandoned Application
First Claim
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1. A system for increasing etch rate and etch selectivity of a masking layer on a substrate, the system comprising:

  • a plurality of substrates containing the masking layer and a layer of silicon or silicon oxide;

    an etch processing chamber configured to process the plurality of substrates, the etch processing chamber containing a treatment liquid for etching the masking layer in the plurality of substrates; and

    a boiling apparatus coupled to the processing chamber and configured to generate a supply of steam water vapor mixture at elevated pressure;

    wherein the steam water vapor mixture is introduced into the etch processing chamber at a flow rate sufficient to maintain a selected target etch rate and a selected target etch selectivity ratio of the masking layer to silicon or silicon oxide.

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