GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE
First Claim
1. A Group III nitride semiconductor light-emitting device comprising at least an n-type-layer-side cladding layer, a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<
- x<
1) layer as a barrier layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor, wherein when the light-emitting layer is divided into three blocks of a first block, a second block, and a third block in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, an Al composition ratio of the barrier layer in each block is set to satisfy a relation z<
y<
x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.
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Abstract
A Group III nitride semiconductor light-emitting device includes a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<x<1) layer as a barrier layer. When the light-emitting layer is divided into three blocks including first, second and third blocks in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the number of barrier layers are the same in the first and third blocks, and the Al composition ratio of each light-emitting layer is set to satisfy a relation x+z=2y and z<x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z.
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Citations
19 Claims
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1. A Group III nitride semiconductor light-emitting device comprising at least an n-type-layer-side cladding layer, a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<
- x<
1) layer as a barrier layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor, wherein when the light-emitting layer is divided into three blocks of a first block, a second block, and a third block in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, an Al composition ratio of the barrier layer in each block is set to satisfy a relation z<
y<
x where an average Al composition ratio of the barrier layers in the first block is represented as x, an average Al composition ratio of the barrier layers in the second block is represented as y, and an average Al composition ratio of the barrier layers in the third block is represented as z. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
- x<
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16. A Group III nitride semiconductor light-emitting device comprising at least an n-type-layer-side cladding layer, a light-emitting layer having a multiple quantum structure including an AlxGa1-xN (0<
- x<
1) layer as a barrier layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor, wherein when the light-emitting layer is divided into three blocks of a first block, a second block, and a third block in the thickness direction from the n-type-layer-side cladding layer to the p-type-layer-side cladding layer, the Al composition ratio of the barrier layer in each block is the same in the first, second, and third blocks, and the thickness of the barrier layer in each block is set so as to satisfy at least one of relations a<
b<
c and c<
b<
a where an average thickness of the barrier layers in the first block is represented as a, an average thickness of the barrier layers in the second block as b, and an average thickness of the barrier layers in the third block as c. - View Dependent Claims (17, 18, 19)
- x<
Specification