LED Device Utilizing Quantum Dots

• US 20120248479A1
• Filed: 03/28/2011
• Published: 10/04/2012
• Est. Priority Date: 03/28/2011
• Status: Active Grant

• Current Assignee: OSRAM Sylvania Inc. (Ams-Osram AG)
• Original Assignee: OSRAM Sylvania Inc. (Ams-Osram AG)
• Inventors: Anc, Maria J.
• Granted Patent: US 8,455,898 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

There is herein described a LED lighting device utilizing quantum dots in layers on top of an LED chip. The quantum dots layers and the LED chip are arranged with gradient refractive indices, so that the refractive index of each layer is preferably less than the refractive index of the immediately underlying layer or chip. The quantum dots with emission peaks at longer wavelengths are preferably arranged in lower layers closer to the LED chip; while the quantum dots with emission peaks at shorter wavelengths are arranged in higher layers farther from the LED chip.

Claims

1. A lighting device comprising:

a light source, the light source having a source refractive index;

a first luminescent layer disposed on top of the light source, the first luminescent layer having a first effective refractive index, the first luminescent layer comprising a first quantum dots composition dispersed in a first matrix material, the first effective refractive index being equal to or less than the source refractive index; and

a second luminescent layer disposed on top of the first luminescent layer, the second luminescent layer having a second effective refractive index, the second luminescent layer comprising a second quantum dots composition dispersed in a second matrix material, the second effective refractive index being less than the first effective refractive index.

2. The lighting device of claim 1, wherein the first quantum dots composition has a first emission spectrum having a first peak wavelength and the second quantum dots composition has a second emission spectrum having a second peak wavelength wherein the second peak wavelength is shorter than or equal to the first peak wavelength.

3. The lighting device of claim 1, wherein the first quantum dots composition has a first emission spectrum having a first peak wavelength and the second quantum dots composition has an absorption spectrum having an absorption peak wavelength wherein the first peak wavelength is longer than the absorption peak wavelength.

4. The lighting device of claim 1, wherein the first luminescent layer is disposed directly on top of the light source.

5. The lighting device of claim 1, wherein the second luminescent layer is disposed directly on top of the first luminescent layer.

6. The lighting device of claim 2, further comprising:

a third luminescent layer disposed on top of the second luminescent layer, the third luminescent layer having a third effective refractive index, the third luminescent layer comprising a third quantum dots composition dispersed in a third matrix material, the third effective refractive index being less than the second effective refractive index, the third quantum dots composition having a third emission spectrum having a third peak wavelength, the third peak wavelength being shorter than the second peak wavelength.

7. The lighting device of claim 1, wherein the light source comprises a light emitting diode.

8. The lighting device of claim 7, wherein the light emitting diode is a blue light emitting diode or an ultraviolet light emitting diode.

9. The lighting device of claim 1, wherein the first or second quantum dots composition comprises at least one material selected from the group consisting of CdS, CdSe, CdTe, CdPo, ZnS, ZnSe, ZnTe, ZnPo, HgS, HgSe, HgTe, MgS, MgSe, MgTe, PbSe, PbS, PbTe, GaN, GaP, GaAs, InP, InAs, CuInS₂, CuInSe₂, CuInTe, ZnGeP₂, CuSe, CdS_1-xSe_x, BaTiO₃, PbZrO₃, PbZr_xTi_1-xO₃, Ba_xSr_1-xTiO₃, SrTiO₃, LaMnO₃, CaMnO₃, ZnSe:

Mn, and La_1-xCa_xMnO₃.

10. The lighting device of claim 1, wherein the refractive indices of the first quantum dots composition and second quantum dots composition are at least 2.2 at a wavelength of at least about 450 nm.

11. The lighting device of claim 1, wherein the first or second matrix material comprises at least one material selected from the group consisting of silicone, epoxy, acrylic, plastic, polymer and glass.

12. The lighting device of claim 1, further comprising an encapsulant layer disposed on top of the second luminescent layer, the encapsulant layer comprising at least one material selected from the group consisting of silicone, epoxy, acrylic, plastic, polymer and glass.

13. The lighting device of claim 1, wherein the first or second luminescent layer further comprises a phosphor composition.

14. The lighting device of claim 1, further comprising an oxide layer disposed on top of the second luminescent layer, an effective refractive index of the oxide layer is less than the second effective refractive index of the second luminescent layer.

15. The lighting device of claim 14, wherein the oxide layer comprises at least one oxide material selected from the group consisting of TiO₂, ZnO, and ZrO₂.

16. The lighting device of claim 15, wherein an average particle diameter of the oxide material is at most 100 nanometers.

17. The lighting device of claim 1, further comprising a phosphor layer disposed on top of the second luminescent layer, an effective refractive index of the phosphor layer being less than the second effective refractive index of the second luminescent layer.

18. The lighting device of claim 17, wherein the phosphor layer further comprises a quantum dots composition.

19. The lighting device of claim 1, wherein the first effective refractive index of the first luminescent layer is at least 2 and the second effective refractive index of the second luminescent layer is at least 1.6.

20. The lighting device of claim 1, wherein the first quantum dots composition and the second quantum dots composition are comprised of a same material.

21. The lighting device of claim 20, wherein the first quantum dots composition has a first emission spectrum having a first peak wavelength and the second quantum dots composition has a second emission spectrum having a second peak wavelength wherein the second peak wavelength is shorter than the first peak wavelength.

22. A lighting device comprising:

an InGaN light emitting diode, the InGaN light emitting diode having a source refractive index;

a first luminescent layer disposed directly on top of the InGaN light emitting diode, the first luminescent layer having a first effective refractive index, the first luminescent layer comprising a InP quantum dots composition dispersed in a first matrix material, the InP quantum dots composition having a first emission spectrum having a first peak wavelength, the first effective refractive index being less than the source refractive index; and

a second luminescent layer disposed directly on top of the first luminescent layer, the second luminescent layer having a effective refractive index, the second luminescent layer comprising a CuInS₂ quantum dots composition dispersed in a second matrix material, the second CuInS₂ quantum dots composition having a second emission spectrum having a second peak wavelength, the second peak wavelength being shorter than the first peak wavelength, the second effective refractive index being less than the first effective refractive index.

23. A lighting device comprising:

an AlGaN light emitting diode, the AlGaN light emitting diode having a source refractive index;

a first luminescent layer disposed directly on top of the AlGaN light emitting diode, the first luminescent layer having a first effective refractive index, the first luminescent layer comprising a first InP quantum dots composition dispersed in a first matrix material, the first InP quantum dots composition having a first emission spectrum having a first peak wavelength, the first InP quantum dots composition having a first volume fraction, the first effective refractive index being less than the source refractive index;

a second luminescent layer disposed directly on top of the first luminescent layer, the second luminescent layer having a second effective refractive index, the second luminescent layer comprising a second InP quantum dots composition dispersed in a second matrix material, the second InP quantum dots composition having a second emission spectrum having a second peak wavelength, the second peak wavelength being shorter than or equal to the first peak wavelength, the second InP quantum dots composition having a second volume fraction, the second volume fraction being less than the first volume fraction, the second effective refractive index being less than the first effective refractive index; and

a third luminescent layer disposed directly on top of the second luminescent layer, the third luminescent layer having a third effective refractive index, the third luminescent layer comprising a ZnSe quantum dots composition dispersed in a third matrix material, the ZnSe quantum dots composition having a third emission spectrum having a third peak wavelength, the third peak wavelength being shorter than the second peak wavelength, the third effective refractive index being less than the second effective refractive index.