ISOLATION STRUCTURE AND DEVICE STRUCTURE INCLUDING THE SAME

• US 20120248518A1
• Filed: 03/28/2011
• Published: 10/04/2012
• Est. Priority Date: 03/28/2011
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Nanya Technology Corporation
• Inventors: Li, Chung-Ren, Renn, Shing-Hwa, Chiang, Yu-Teh
• Granted Patent: US 8,299,562 B2
• Time in Patent Office: Days
• US Class Current: 257/296
• CPC Class Codes: H01L 21/76229 Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
• CPC Class Codes: H10B 12/053 the transistor being at least partially in a trench in the substrate vertical transistor in combination with a capacitor formed in a substrate trench H10B12/0383
• CPC Class Codes: H10B 12/34 the transistor being at least partially in a trench in the substrate
• CPC Class Codes: H10B 12/482 Bit lines

Abstract

An isolation structure is described, including a doped semiconductor layer disposed in a trench in a semiconductor substrate and having the same conductivity type as the substrate, gate dielectric between the doped semiconductor layer and the substrate, and a diffusion region in the substrate formed by dopant diffusion through the gate dielectric from the doped semiconductor layer. A device structure is also described, including the isolation structure and a vertical transistor in the substrate beside the isolation structure. The vertical transistor includes a first S/D region beside the diffusion region and a second S/D region over the first S/D region both having a conductivity type different from that of the doped semiconductor layer.

Claims

1. An isolation structure, comprising:

a doped semiconductor layer in a trench in a semiconductor substrate, having the same conductivity type as the substrate;

gate dielectric between the doped semiconductor layer and the substrate; and

a diffusion region disposed besides a source/drain (S/D) region in the substrate, formed by dopant diffusion through the gate dielectric from the doped semiconductor layer, wherein the diffusion region has a first conductivity type and the source/drain region has a second conductivity type.

2. The isolation structure of claim 1, further comprising a metallic layer in the trench and under the doped semiconductor layer, wherein the gate dielectric is also between the metallic layer and the substrate.

3. The isolation structure of claim 2, wherein the metallic layer comprises titanium nitride (TiN) or tantalum nitride (TaN).

4. The isolation structure of claim 1, wherein the first conductivity type is p-type and the second conductivity type is n-type.

5. The isolation structure of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.

6. The isolation structure of claim 1, wherein the doped semiconductor layer comprises doped poly-Si.

7. A device structure, comprising:

a semiconductor substrate having a first conductivity type;

an isolation structure, including a first doped semiconductor layer having the first conductivity type in a first trench in the substrate, gate dielectric between the first doped semiconductor layer and the substrate, and a diffusion region in the substrate formed by dopant diffusion through the gate dielectric from the first doped semiconductor layer;

a first vertical transistor in the substrate at a first side of the isolation structure, including a first source/drain (S/D) region beside the diffusion region and a second source/drain (S/D) region over the first S/D region both having a second conductivity type.

8. The device structure of claim 7, wherein the isolation structure further includes a metallic layer in the first trench and under the first doped semiconductor layer, and the gate dielectric is also between the metallic layer and the substrate.

9. The device structure of claim 8, wherein the metallic layer comprises titanium nitride (TiN) or tantalum nitride (TaN).

10. The device structure of claim 7, wherein the first conductivity type is p-type and the second conductivity type is n-type.

11. The device structure of claim 7, wherein the first conductivity type is n-type and the second conductivity type is p-type.

12. The device structure of claim 7, wherein the first doped semiconductor layer in the isolation structure comprises doped poly-Si.

13. The device structure of claim 7, which is a memory structure.

14. The device structure of claim 13, wherein the memory structure is a DRAM structure and further comprises a capacitor coupled to the second S/D region.

15. The device structure of claim 14, wherein the first S/D region contacts a buried bit line in a second trench in the substrate.

16. The device structure of claim 15, wherein the buried bit line comprises a metallic layer and a second doped semiconductor layer having the second conductivity type thereon, and the second doped semiconductor layer contacts the first S/D region.

17. The device structure of claim 16, wherein the first S/D region is formed through dopant diffusion from the second doped semiconductor layer.

18. The device structure of claim 15, wherein two buried bit lines are disposed in parallel in the second trench.

19. The device structure of claim 7, further comprising a second vertical transistor at a second side of the isolation structure opposite to the first side of the isolation structure.