SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE
First Claim
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1. A device, comprising:
- a first layer comprising a plurality of first transistors;
at least one metal layer providing interconnection between said first transistors, wherein said metal layer comprises aluminum or copper;
a second layer comprising a plurality of second transistors wherein said second transistors comprise mono-crystalline material; and
a thermal connection to at least one of said second transistors, wherein said thermal connection is electrically isolated from at least one of said second transistors, wherein said thermal connection provides a thermally conductive path between at least one of said second transistors and the top or bottom surface of said device.
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Abstract
A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.
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Citations
20 Claims
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1. A device, comprising:
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a first layer comprising a plurality of first transistors; at least one metal layer providing interconnection between said first transistors, wherein said metal layer comprises aluminum or copper; a second layer comprising a plurality of second transistors wherein said second transistors comprise mono-crystalline material; and a thermal connection to at least one of said second transistors, wherein said thermal connection is electrically isolated from at least one of said second transistors, wherein said thermal connection provides a thermally conductive path between at least one of said second transistors and the top or bottom surface of said device. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A device, comprising:
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a first layer of single crystal including a plurality of first transistors; a plurality of metal layers providing interconnection between said first transistors; a second layer of less than about 0.4 micron thick single crystal overlaying said metal layers, the second layer comprising at least one second transistor; and a thermally conducting path from said second layer to a heat sink; wherein said thermally conducting path has a thermal conductivity of at least about 100 W/m-K, and said thermally conducting path comprises a power conduction path to at least one of said second transistors. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A device, comprising:
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a first layer comprising a plurality of first transistors; a second layer comprising a plurality of second transistors wherein said second transistors comprise mono-crystalline material; and a plurality of thermally conducting paths from said second layer to a heat sink; wherein said thermally conducting paths have a thermal conductivity of at least about 100 W/m-K, and said thermally conducting paths are part of a power delivery path to at least one of said second transistors. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification