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SYSTEM COMPRISING A SEMICONDUCTOR DEVICE AND STRUCTURE

  • US 20120248595A1
  • Filed: 06/08/2012
  • Published: 10/04/2012
  • Est. Priority Date: 11/18/2010
  • Status: Active Grant
First Claim
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1. A device, comprising:

  • a first layer comprising a plurality of first transistors;

    at least one metal layer providing interconnection between said first transistors, wherein said metal layer comprises aluminum or copper;

    a second layer comprising a plurality of second transistors wherein said second transistors comprise mono-crystalline material; and

    a thermal connection to at least one of said second transistors, wherein said thermal connection is electrically isolated from at least one of said second transistors, wherein said thermal connection provides a thermally conductive path between at least one of said second transistors and the top or bottom surface of said device.

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