MEMS DEVICE AND MANUFACTURING PROCESS THEREOF

• US 20120248615A1
• Filed: 02/21/2012
• Published: 10/04/2012
• Est. Priority Date: 03/28/2011
• Status: Active Grant

• Current Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Original Assignee: Miradia Inc. (Walsin Lihwa Corporation)
• Inventors: CHIEN, YU-HAO, WU, HUA-SHU, CHUNG, SHIH-YUNG, TSENG, LI-TIEN, YEH, YU-TE
• Granted Patent: US 8,754,529 B2
• Time in Patent Office: Days
• US Class Current: 257/770
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A manufacturing process of a MEMS device divides a substrate for fabricating a MEMS component into two electrically isolated regions, so that the MEMS component and the circuit disposed on its surface could connect electrically with another substrate below respectively through the corresponding conducing regions, whereby the configuration of the electrical conducting paths and the manufacturing process are simplified. A MEMS device manufactured by using the aforementioned process is also disclosed herein.

Claims

1. A MEMS device comprising:

a first substrate comprising at least a first circuit disposed on a surface of the first substrate;

a second substrate having a first surface and a second surface, the second substrate comprising;

a MEMS component disposed on the surface of the first substrate with the first surface facing towards the first substrate, and electrically connected with the first circuit;

a conducting part electrically isolated from the MEMS component, and electrically connected with the first circuit; and

a second circuit disposed on the second surface of the MEMS component, electrically isolated from the MEMS component, and electrically connected with the first circuit via the conducting part;

a third substrate having a recessed region and a plurality of standoff structures, disposed over the second substrate, and connecting to the first substrate with the standoff structures such that the second substrate is enclosed in the recessed region.

2. The MEMS device according to claim 1, wherein the MEMS component comprises a conducting via, wherein the conducting via penetrates through the first surface and the second surface of the MEMS component, and is electrically connected with the first circuit and is electrically connected with the MEMS component through an ohmic contact.

3. The MEMS device according to claim 2, wherein the MEMS component further comprises a conductive layer, wherein the conductive layer is electrically connected with the conducting via, and forms the ohmic contact with the second surface the MEMS component.

4. The MEMS device according to claim 2, wherein the ohmic contact region comprises at least one of silicon, aluminum-copper alloy, titanium nitride and tungsten.

5. The MEMS device according to claim 1, wherein the conducting part comprises a conducting via penetrating the first surface and the second surface of the conducting part, and connecting electrically with the first circuit and the second circuit.

6. The MEMS device according to claim 1, wherein the second circuit forms an ohmic contact with the conducting part at the second surface, and the ohmic contact region comprises at least one of silicon, aluminum-copper alloy, titanium nitride and tungsten.

7. The MEMS device according to claim 1, wherein the first substrate comprises a CMOS substrate.

8. The MEMS device according to claim 1, wherein the second substrate comprises single crystal silicon.

9. The MEMS device according to claim 1, wherein the thickness of the second substrate varies as a function of position along a direction orthogonal to the thickness of the second substrate.

10. The MEMS device according to claim 1, wherein the connection regions of the MEMS component and the first circuit, and the conducting part and the first circuit comprise an alloy comprising at least one of aluminum, copper, germanium, indium, gold and silicon.

11. The MEMS device according to claim 1, wherein the connection regions of the third substrate and the first substrate comprise an alloy comprising at least one of aluminum, copper, germanium, indium, gold and silicon.

12. The MEMS device according to claim 1, wherein the third substrate is conductive and comprises at least one of doped silicon, ceramic with conductive plating, glass with a tin oxide (ITO) coating, and tantalum oxide.

13. A manufacturing process of a MEMS device, comprising:

providing a first substrate comprising at least one first circuit disposed on a surface of the first substrate;

providing a second substrate having a first surface and a second surface;

disposing the second substrate on the surface of the first substrate with the first surface facing towards the first substrate;

dividing the second substrate into a component region and a conducting part, wherein the component region and the conducting part are electrically isolated from each other and are respectively electrically connected with the first circuit;

forming a conductive layer on the second surface of the second substrate;

patterning the conductive layer so as to form a second circuit;

forming a MEMS component in the component region of the second substrate;

providing a third substrate having a recessed region and a plurality of standoff structures; and

disposing the third substrate over the second substrate, and connecting the standoff structures and the first substrate such that the second substrate is enclosed in the recessed region.

14. The manufacturing process of the MEMS device according to claim 13, further comprising:

forming a conducting via penetrating the first surface and the second surface of the component region, and connected electrically with the first circuit and connected electrically with the MEMS component through an ohmic contact.

15. The manufacturing process of the MEMS device according to claim 14, further comprising:

forming a conductive layer electrically connected with the conducting via, and forming the ohmic contact with the second surface of the MEMS component.

16. The manufacturing process of the MEMS device according to claim 14, wherein the ohmic contact region comprises at least one of silicon, aluminum-copper alloy, titanium nitride and tungsten.

17. The manufacturing process of the MEMS device according to claim 13, further comprising:

forming a conducting via penetrating the first surface and the second surface of the conducting part, and connected electrically with the first circuit and the second circuit.

18. The manufacturing process of the MEMS device according to claim 13, wherein the second circuit forms an ohmic contact with the conducting part at the second surface, and the ohmic contact region comprises at least one of silicon, aluminum-copper alloy, titanium nitride and tungsten.

19. The manufacturing process of the MEMS device according to claim 13, wherein the connection regions of the second substrate and the first substrate, and the third substrate and the first substrate are bounded by a plurality of fence posts.

20. The manufacturing process of the MEMS device according to claim 19, wherein the fence post comprises a dielectric material.

21. The manufacturing process of the MEMS device according to claim 13, further comprising:

etching the second substrate such that the thickness of the second substrate varies as a function of position along a direction orthogonal to the thickness of the second substrate.

22. The manufacturing process of the MEMS device according to claim 13, further comprising thinning the second substrate.

23. The manufacturing process of the MEMS device according to claim 13, wherein the step for connecting the second substrate and the first substrate comprises using at least one of fusion bonding, eutectic bonding, conductive eutectic bonding, soldering, welding and adhesion techniques.

24. The manufacturing process of the MEMS device according to claim 13, wherein the step for connecting the third substrate and the first substrate comprises using at least one of fusion bonding, glass frit bonding, eutectic bonding, conductive eutectic bonding, soldering, welding, and adhesion techniques.

25. The manufacturing process of the MEMS device according to claim 13, wherein the steps for connecting the second substrate and the first substrate, and the third substrate and the first substrate are respectively performed at a first temperature and a second temperature, wherein the first temperature is higher than the second temperature.

26. The manufacturing process of the MEMS device according to claim 13, wherein the first temperature is below 450°

C.

27. The manufacturing process of the MEMS device according to claim 13, wherein the first substrate comprises a CMOS substrate.

28. The manufacturing process of the MEMS device according to claim 13, wherein the second substrate comprises single crystal silicon.

29. The manufacturing process of the MEMS device according to claim 13, wherein the third substrate is conductive and comprises at least one of doped silicon, ceramic with conductive plating, glass with tin oxide (ITO) coating, and tantalum oxide.