Light Diode

• US 20120256161A1
• Filed: 03/15/2010
• Published: 10/11/2012
• Est. Priority Date: 03/25/2009
• Status: Abandoned Application

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Sabathil, Matthias, Kocur, Simon, Grötsch, Stefan
• Application Number:
  US13/260,562
• Publication Number:
  US 20120256161A1
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 25/0756 Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

A light-emitting diode is specified, comprising a first semiconductor body (10), which comprises at least one active region (11) which is electrically contact-connected, wherein electromagnetic radiation (110) in a first wavelength range is generated in the active region (11) during the operation of the light-emitting diode, a second semiconductor body (20), which is fixed to the first semiconductor body (10) at a top side (10a) of the first semiconductor body (10), wherein the second semiconductor body (20) has a re-emission region (21) with a multiple quantum well structure (213), and wherein electromagnetic radiation (110) in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range (220) is re-emitted in the re-emission region (21) during the operation of the light-emitting diode, and a connecting material (30) arranged between the first (10) and second semiconductor body (20), wherein the connecting material (30) mechanically connects the first (10) and the second semiconductor body (20) to one another.

Claims

1. A light-emitting diode comprising:

a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode;

a second semiconductor body, which is fixed to the first semiconductor body a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and

a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another.

2. The light-emitting diode according to claim 1, wherein the connecting material is electrically insulating.

3. The light-emitting diode according to claim 2, wherein the connecting material is silicone or contains a silicone.

4. The light-emitting diode according to claim 1, wherein the first semiconductor body has a multiplicity of coupling-out structures at its top side facing the second semiconductor body.

5. The light-emitting diode according to claim 4, wherein the connecting material encloses the coupling-out structures at their exposed outer areas.

6. The light-emitting diode according to claim 4, wherein the coupling-out structures consist of a material whose refractive index deviates by at most 30% from the refractive index of the first semiconductor body.

7. The light-emitting diode according to claim 1, wherein the second semiconductor body has a multiplicity of coupling-out structures at its top side remote from the first semiconductor body and/or its underside facing the first semiconductor body.

8. The light-emitting diode according to claim 7, wherein the coupling-out structures consist of a material whose refractive index deviates by at most 30% from the refractive index of the second semiconductor body.

9. The light-emitting diode according to claim 4, wherein the coupling-out structures are formed with a material which is different from the material of the first semiconductor body and from the material of the second semiconductor body.

10. The light-emitting diode according to claim 9, wherein the material of the coupling-out structures contains or consists of one of the following substances:

TiO₂, ZnS, AlN, SiC, BN, Ta₂O₅.

11. The light-emitting diode according to claim 1, wherein a mirror layer is fixed to the first semiconductor body at the underside of the first semiconductor body remote from the second semiconductor body.

12. The light-emitting diode according to claim 1, wherein the first wavelength range comprises electromagnetic radiation from the wavelength range of UV radiation and/or blue light.

13. The light-emitting diode according to claim 12, wherein the second wavelength range comprises electromagnetic radiation from the wavelength range of green light.

14. The light-emitting diode according claim 1, wherein the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.

15. A light-emitting diode comprising:

a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode;

a second semiconductor body, which is fixed to the first semiconductor body at a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and

a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another,

wherein the first semiconductor body has a multiplicity of coupling-out structures at its top side facing the second semiconductor body,

wherein the connecting material encloses the coupling-out structures at their exposed outer areas, and

wherein the coupling-out structures are formed with a material which is different from the material of the first semiconductor body and from the material of the second semiconductor body.

16. The light-emitting diode according claim 15, wherein the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.

17. The light-emitting diode comprising:

a first semiconductor body, which comprises at least one active region which is electrically contact-connected, wherein electromagnetic radiation in a first wavelength range is generated in the active region during the operation of the light-emitting diode; and

a second semiconductor body, which is fixed to the first semiconductor body at a top side of the first semiconductor body, wherein the second semiconductor body has a re-emission region with a multiple quantum well structure, and wherein electromagnetic radiation in the first wavelength range is absorbed and electromagnetic radiation in a second wavelength range is re-emitted in the re-emission region during the operation of the light-emitting diode; and

wherein a connecting material arranged between the first and second semiconductor body, wherein the connecting material mechanically connects the first and the second semiconductor body to one another,

wherein the first wavelength range comprises electromagnetic radiation from the wavelength range of UV radiation and/or blue light,

wherein the second wavelength range comprises electromagnetic radiation from the wavelength range of green light, and

the multiple quantum well structure of the re-emission region has at least 20 quantum well layers.