Method for Sealing a Micro-Cavity

• US 20120256308A1
• Filed: 04/11/2012
• Published: 10/11/2012
• Est. Priority Date: 04/11/2011
• Status: Abandoned Application

• Current Assignee: IMEC International
• Original Assignee: IMEC International
• Inventors: Helin, Philippe
• Application Number:
  US13/444,665
• Publication Number:
  US 20120256308A1
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: B81C 1/00333 Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
• CPC Class Codes: B81C 2203/0136 Growing or depositing of a covering layer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid

Abstract

A method for sealing a cavity is disclosed. The method includes depositing a membrane layer on top of a sacrificial layer, etching release holes into the membrane layer, and removing at least a portion of the sacrificial layer through the release holes to form a cavity. Prior to removing the sacrificial layer portion, the method includes producing a narrowing layer on the side walls of the release holes. The narrowing layer can be a sealing layer that seals off the release holes after a reflow step. Alternatively, the narrowing layer can be a layer that does not have a sealing function and is used to narrow the holes, allowing the holes to be sealed without a sealing or other material entering the cavity. The narrowing layer may be deposited by conformal deposition followed by an anisotropic etch or by direct deposition on the side walls of the release holes.

Claims

1. A method for sealing a cavity, comprising:

providing a substrate;

depositing a sacrificial layer on the substrate;

depositing a membrane layer on the sacrificial layer;

etching at least one release hole in the membrane layer exposing the sacrificial layer;

forming a narrowing layer on the side walls of the at least one release hole;

removing at least a portion of the sacrificial layer via the release hole to form a cavity; and

closing the at least one release hole.

2. The method of claim 1, wherein closing the at least one release hole includes performing a reflow of the narrowing layer.

3. The method of claim 1, wherein closing the at least one release hole includes depositing a sealing layer on top of the membrane layer to close the at least one release hole directly.

4. The method of claim 1, wherein closing the at least one release hole includes depositing a sealing layer on top of the membrane layer and performing a reflow of the sealing layer.

5. The method of claim 1, wherein forming a narrowing layer includes:

depositing a conformal layer on the membrane layer and on side walls and bottom of the at least one release hole; and

anisotropically etching the conformal layer to leave the conformal layer only on the side walls of the at least one release hole.

6. The method of claim 1, wherein forming a narrowing layer includes depositing selectively the narrowing layer on the side walls of the at least one release hole.

7. The method of claim 1, wherein the narrowing layer is formed of a material same as the membrane layer.

8. The method of claim 1, wherein the narrowing layer is a metal or metal alloy layer.

9. The method of claim 8, wherein the narrowing layer includes at least one of aluminium, germanium, gold, and indium.

10. The method of claim 1, wherein the narrowing layer is a stack of layers.

11. The method of claim 1, wherein while etching the at least one release hole, further comprising etching the membrane layer to form a cap structure above the cavity.

12. The method of claim 1, wherein while etching the at least one release hole, further comprising etching the membrane layer to form contact pads.

13. The method of claim 1, further comprising depositing a metal layer on the membrane layer.

14. The method of claim 1, wherein the substrate comprises one or more Micro or Nano Electromechanical System devices, and wherein removing at least a portion of the sacrificial layer forms the cavity comprising the one or more Micro or Nano Electromechanical System devices.

15. The method of claim 1, wherein the substrate is formed of a base substrate, an insulator layer on the base substrate, and a structural semiconductor layer comprising one or more Micro or Nano Electromechanical System devices on the insulating layer, and wherein the at least a portion of the insulating layer is removed with the sacrificial layer, through the at least one release hole, so as to form the cavity comprising the one or more Micro or Nano Electromechanical System devices.

16. A system, comprising:

a Micro or Nano Electromechanical System device encapsulated in a cavity;

a cap covering the cavity;

at least one release hole in the cap; and

a sealing material that seals the at least one release hole and is located on side walls of the at least one release hole.

17. The system of claim 16, wherein a layer of the sealing material is present on side walls of the cap, the layer having a portion on a lower rim of the side walls of the cap, the portion being thicker than the rest of the layer, the portion extending downward with respect to the rim.

18. The system of claim 16, further comprising a metal layer on a top surface of the cap.