MANUFACTURING METHOD OF LIQUID CRYSTAL DISPLAY DEVICE AND LIQUID CRYSTAL DISPLAY DEVICE

• US 20120257133A1
• Filed: 03/29/2012
• Published: 10/11/2012
• Est. Priority Date: 04/11/2011
• Status: Abandoned Application

• Current Assignee: Japan Display Incorporated
• Original Assignee: Hitachi Displays Limited (Japan Display Incorporated)
• Inventors: Hazawa, Eisaku, Tsuchiya, Kenji, Yamamoto, Hiroaki
• Application Number:
  US13/433,394
• Publication Number:
  US 20120257133A1
• Time in Patent Office: Days
• US Class Current: 349/43
• CPC Class Codes: G02F 1/134363 for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

A manufacturing method of liquid crystal display device is provided that can increase manufacturing yield by reducing the number of layers and manufacturing costs and by preventing backlight lamp failure.

In the manufacturing method of the device, a semiconductor layer 4 and a pixel electrode 5 are formed on a gate insulating film 3. Subsequently, a drain electrode electrically interconnecting the semiconductor layer 4 and the pixel electrode 5 of the pixel region A is formed by overlaying a flat solid conductive film on the substrate, followed by removing the conductive film with the use of a photoresist pattern as a mask, while exposing the semiconductor layer 4 at the pixel region A and the adjacent area C. The semiconductor layer 4 at the pixel region A is etched by using, as an index, an etching amount of the semiconductor layer 4 at the adjacent area.

Claims

1. A manufacturing method of liquid crystal display device comprising:

a first step of forming a first semiconductor layer at a first region of a substrate and a second semiconductor layer at a second region of the substrate;

a second step of forming a first electrode at the first region in spaced relation to the first semiconductor layer and a second electrode at the second region in spaced relation to the second semiconductor layer;

a third step of forming a third electrode electrically interconnecting the first semiconductor layer and the first electrode of the first region and also exposing the first semiconductor layer and the second semiconductor layer; and

a fourth step of etching the exposed first semiconductor layer using an etching amount of the second semiconductor layer as an index.

3. The manufacturing method of liquid crystal display device according to claim 1, wherein the first and second semiconductor layers comprise an amorphous silicon layer.

4. The manufacturing method of liquid crystal display device according to claim 1, wherein the first and second electrodes comprise an ITO electrode.

5. The manufacturing method of liquid crystal display device according to claim 1, wherein the area and position of the second electrode formed at the second region are defined in a manner that the etching amount of the first semiconductor layer is equal to that of the second semiconductor layer in the fourth step.

2. A manufacturing method of liquid crystal display device comprising:

a gate electrode forming step of forming a first gate electrode at a pixel region of a glass substrate and a second gate electrode at a thickness TEG zone of the glass substrate;

a gate insulating film forming step of overlaying a gate insulating film on the glass substrate formed with the first and second gate electrodes;

a semiconductor layer forming step of forming a first semiconductor layer on the gate insulating film formed with the first gate electrode of the pixel region, and a second semiconductor layer on the gate insulating film formed with the second gate electrode of the thickness TEG zone;

a pixel electrode forming step of forming a first pixel electrode on the gate insulating film of the pixel region in spaced relation to the first semiconductor layer, and forming a second pixel electrode on the gate insulating film in the vicinity of the thickness TEG zone in spaced relation to the second semiconductor layer;

a drain electrode forming step of forming a drain electrode electrically interconnecting the first semiconductor layer and the first pixel electrode of the pixel region by overlaying a flat solid conductive film on the glass substrate, followed by removing the conductive film with the use of a photoresist pattern as a mask while exposing the first semiconductor layer and the second semiconductor layer;

a channel etching step of etching the exposed first semiconductor layer by continuously using the photoresist pattern as the mask and by using an etching amount of the second semiconductor layer as an index;

an insulating film forming step of subsequently overlaying an insulating film on the glass substrate; and

a common electrode forming step of forming a common electrode on the insulating film on the first pixel electrode.

6. The manufacturing method of liquid crystal display device according to claim 2, wherein the conductive film comprises a Mo film or a multilayer film including an Al film sandwiched between Mo films or Al-containing Mo films.

7. The manufacturing method of liquid crystal display device according to claim 2, wherein the first and second semiconductor layers comprise an amorphous silicon layer and the first and second pixel electrodes comprise an ITO electrode.

8. A liquid crystal display device comprising a pixel region defined by a first region on a substrate,

wherein disposed at the pixel region are a gate electrode;

a gate insulating film overlaid on the gate electrode;

a semiconductor layer formed on the gate insulating film overlaid on the gate electrode;

a pixel electrode spaced away from the semiconductor layer;

a drain electrode extended on the semiconductor layer and the pixel electrode for electrically interconnecting the semiconductor layer and the pixel electrode; and

a common electrode formed upwardly of the pixel electrode, and

wherein at a second region on the substrate, an electrode is formed at the same time as the pixel electrode and from the same material as the pixel electrode.

9. The liquid crystal display device according to claim 8, wherein the gate insulating film is a silicon nitride film, the semiconductor layer is an amorphous silicon layer and the pixel electrode is an ITO electrode.