MEMORY SYSTEM WITH DATA LINE SWITCHING SCHEME
First Claim
1. A non-volatile storage device, comprising:
- a plurality of non-volatile storage elements;
one or more control circuits that perform memory operations; and
a first set of selection circuits, each selection circuit of the first set of selection circuits is in communication with the one or more control circuits and a different group of two or more of the non-volatile storage elements, each of the selection circuits of the first set of selection circuits concurrently connect a respective first non-volatile storage element of respective groups of the non-volatile storage elements to the one or more control circuits for concurrently performing a memory operation on the first non-volatile storage element of each group, the selection circuits independently detect completion of the memory operation for the first non-volatile storage element of each group, the selection circuits commence for each group another memory operation on a second non-volatile storage element for the respective group independently of the detection of completion of the memory operation for the first non-volatile storage elements of the other groups and in response to the independent detection of completion of the memory operation for the first non-volatile storage element of the respective group.
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Accused Products
Abstract
A storage system includes a three-dimensional memory array that has multiple layers of non-volatile storage elements grouped into blocks. Each block includes a subset of first selection circuits for selectively coupling a subset of array lines (e.g. bit lines) of a first type to respective local data lines. Each block includes a subset of second selection circuits for selectively coupling a subset of the respective local data lines to global data lines that are connected to control circuitry. To increase the performance of memory operations, the second selection circuits can change their selections independently of each other.
15 Citations
14 Claims
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1. A non-volatile storage device, comprising:
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a plurality of non-volatile storage elements; one or more control circuits that perform memory operations; and a first set of selection circuits, each selection circuit of the first set of selection circuits is in communication with the one or more control circuits and a different group of two or more of the non-volatile storage elements, each of the selection circuits of the first set of selection circuits concurrently connect a respective first non-volatile storage element of respective groups of the non-volatile storage elements to the one or more control circuits for concurrently performing a memory operation on the first non-volatile storage element of each group, the selection circuits independently detect completion of the memory operation for the first non-volatile storage element of each group, the selection circuits commence for each group another memory operation on a second non-volatile storage element for the respective group independently of the detection of completion of the memory operation for the first non-volatile storage elements of the other groups and in response to the independent detection of completion of the memory operation for the first non-volatile storage element of the respective group. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A non-volatile storage device, comprising:
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a plurality of groups of non-volatile storage elements; means for concurrently performing a memory operation on a first non-volatile storage element of each group of the plurality of groups of non-volatile storage elements; means for independently detecting completion of the memory operation for the first non-volatile storage element of each group; and means for commencing, for each group, another memory operation on a second non-volatile storage element of the group independently of the detection of completion of the memory operation for the first non-volatile storage elements of the other groups and in response to the independent detection of completion of the memory operation for the first non-volatile storage element of the group. - View Dependent Claims (11, 12, 13, 14)
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Specification