Semiconductor substrate, semiconductor device, and manufacturing methods thereof

• US 20120258559A1
• Filed: 06/13/2012
• Published: 10/11/2012
• Est. Priority Date: 06/10/2009
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Sakai, Shiro
• Granted Patent: US 9,006,084 B2
• Time in Patent Office: Days
• US Class Current: 438/46
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds

Abstract

Exemplary embodiments of the present invention provide a method of fabricating a semiconductor substrate, the method including forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, etching the substrate using a solution to remove the metallic material layer and a portion of the first semiconductor layer, and forming a cavity in the first semiconductor layer under where the metallic material layer was removed.

Claims

1. A method of fabricating a light emitting device using a recycled substrate, the method comprising:

forming a plurality of compound semiconductor layers on a first substrate, the compound semiconductor layers comprising a first semiconductor layer;

disposing a second substrate on the plurality of compound semiconductor layers;

separating the first substrate from the plurality of semiconductor layers at the first semiconductor layer, thereby exposing a first surface of the first semiconductor layer; and

flattening the first surface of the first semiconductor layer,

wherein separating the first substrate from the plurality of semiconductor layers comprises;

forming a plurality of cavities in the first semiconductor layer; and

etching the first semiconductor layer to increase the volume of each of the plurality of the cavities.

2. The method of claim 1, further comprising forming a patterned layer on the first semiconductor layer.

3. The method of claim 2, further comprising etching a part of the first semiconductor layer using a chemical solution.

4. The method of claim 3, further comprising etching a part of the patterned layer using the chemical solution.

5. The method of claim 4, wherein the chemical solution comprises at least one of HF, NaOH, and KOH.

6. The method of claim 2, wherein the patterned layer comprises an oxide layer.

7. The method of claim 2, wherein the patterned layer comprises a metallic layer.

8. The method of claim 1, wherein the first substrate comprises GaN.

9. The method of claim 1, wherein the plurality of semiconductor layers comprises Ga and N.

10. The method of claim 1, further comprising forming a second semiconductor layer on the first semiconductor layer.

11. The method of claim 10, wherein the first semiconductor layer comprises a different material from the second semiconductor layer.

12. The method of claim 10, wherein the second semiconductor layer is formed at over 1000 degrees Celsius.

13. The method of claim 1, wherein a distance between a center of a cavity of the plurality of cavities and the first substrate is less than a distance between the edge of cavity and the first substrate.

14. The method of claim 1, wherein the second substrate is disposed on a second side of the plurality of compound semiconductor layers opposite to the first substrate.