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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

  • US 20120258575A1
  • Filed: 04/02/2012
  • Published: 10/11/2012
  • Est. Priority Date: 04/06/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an oxide semiconductor layer;

    forming a gate insulating film adjacent to the oxide semiconductor layer;

    forming a gate electrode layer adjacent to the oxide semiconductor layer with the gate insulating film interposed therebetween,forming an aluminum oxide film over the gate electrode layer; and

    performing heat treatment on at least the oxide semiconductor layer,wherein a thickness of the aluminum oxide film is greater than 50 nm and less than or equal to 500 nm.

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