MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor layer;
forming a gate insulating film adjacent to the oxide semiconductor layer;
forming a gate electrode layer adjacent to the oxide semiconductor layer with the gate insulating film interposed therebetween,forming an aluminum oxide film over the gate electrode layer; and
performing heat treatment on at least the oxide semiconductor layer,wherein a thickness of the aluminum oxide film is greater than 50 nm and less than or equal to 500 nm.
1 Assignment
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Accused Products
Abstract
To provide a highly reliable semiconductor device manufactured by giving stable electric characteristics to a semiconductor device including an oxide semiconductor. In a manufacturing process of a transistor, an oxide semiconductor layer, a source electrode layer, a drain electrode layer, a gate insulating film, a gate electrode layer, and an aluminum oxide film are formed in this order, and then heat treatment is performed on the oxide semiconductor layer and the aluminum oxide film, whereby an oxide semiconductor layer from which an impurity containing a hydrogen atom is removed and which includes a region containing oxygen more than the stoichiometric proportion is formed. In addition, when the aluminum oxide film is formed, entry and diffusion of water or hydrogen into the oxide semiconductor layer from the air due to heat treatment in a manufacturing process of a semiconductor device or an electronic appliance including the transistor can be prevented.
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Citations
24 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor layer; forming a gate insulating film adjacent to the oxide semiconductor layer; forming a gate electrode layer adjacent to the oxide semiconductor layer with the gate insulating film interposed therebetween, forming an aluminum oxide film over the gate electrode layer; and performing heat treatment on at least the oxide semiconductor layer, wherein a thickness of the aluminum oxide film is greater than 50 nm and less than or equal to 500 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming a base insulating film; forming an oxide semiconductor layer over and in contact with the base insulating film; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming a gate insulating film over and in contact with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; forming a gate electrode layer over the gate insulating film in a region overlapping with the oxide semiconductor layer; forming an aluminum oxide film over and in contact with the gate insulating film and the gate electrode layer; and performing heat treatment on the oxide semiconductor layer, wherein a thickness of the aluminum oxide film is greater than 50 nm and less than or equal to 500 nm. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising the steps of:
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manufacturing a transistor by a method comprising the steps of; forming a base insulating film; forming an oxide semiconductor layer over and in contact with the base insulating film; forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer; forming a gate insulating film over and in contact with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; forming a gate electrode layer over the gate insulating film in a region overlapping with the oxide semiconductor layer; and forming an aluminum oxide film over and in contact with the gate insulating film and the gate electrode layer; and performing heat treatment on the transistor, wherein a thickness of the aluminum oxide film is greater than 50 nm and less than or equal to 500 nm. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification