E-Beam Enhanced Decoupled Source for Semiconductor Processing
First Claim
1. A semiconductor substrate processing system, comprising:
- a processing chamber;
a substrate support defined to support a substrate in the processing chamber;
a plasma chamber defined separate from the processing chamber, the plasma chamber defined to generate a plasma;
a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber, the plurality of fluid transmission pathways defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber; and
an electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber above and across the substrate support.
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Accused Products
Abstract
A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.
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Citations
20 Claims
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1. A semiconductor substrate processing system, comprising:
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a processing chamber; a substrate support defined to support a substrate in the processing chamber; a plasma chamber defined separate from the processing chamber, the plasma chamber defined to generate a plasma; a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber, the plurality of fluid transmission pathways defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber; and an electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber above and across the substrate support. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for processing a semiconductor substrate, comprising:
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placing a substrate on a substrate support in exposure to a processing region; generating a plasma in a plasma generation region separate from the processing region; supplying reactive constituents of the plasma from the plasma generation region to the processing region; and injecting electrons into the processing region over the substrate, whereby the injected electrons modify an ion density in the processing region to affect processing of the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification