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OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

  • US 20120261657A1
  • Filed: 04/03/2012
  • Published: 10/18/2012
  • Est. Priority Date: 04/13/2011
  • Status: Active Grant
First Claim
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1. An oxide semiconductor film comprising a c-axis-aligned crystalline region aligned in a direction substantially parallel to a normal vector of a surface where the oxide semiconductor film is formed,wherein a composition of the c-axis-aligned crystalline region is represented by In1+δ

  • Ga1−

    δ

    O3(ZnO)m (0<

    δ

    <

    1 and m=1 to 3 are satisfied), andwherein a composition of the oxide semiconductor film is represented by InxGayO3(ZnO)m (0<

    x<

    2, 0<

    y<

    2, and m=1 to 3 are satisfied).

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