ZnO-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20120261658A1
• Filed: 04/12/2012
• Published: 10/18/2012
• Est. Priority Date: 04/13/2011
• Status: Active Grant

• Current Assignee: ROHM Co., Ltd., Tohoku University National Universities Corporation
• Original Assignee: ROHM Co., Ltd., Tohoku University National Universities Corporation
• Inventors: AKASAKA, Shunsuke, KAWASAKI, Masashi, TSUKAZAKI, Atsushi
• Granted Patent: US 8,759,828 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

A ZnO-based semiconductor device includes an n type ZnO-based semiconductor layer, an aluminum oxide film formed on the n type ZnO-based semiconductor layer, and a palladium layer formed on the aluminum oxide film. With this configuration, the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

Claims

1. A ZnO-based semiconductor device, comprising:

an n type ZnO-based semiconductor layer;

an aluminum oxide film formed on the n type ZnO-based semiconductor layer; and

a palladium layer formed on the aluminum oxide film,

wherein the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.

2. The ZnO-based semiconductor device of claim 1, wherein a surface of the n type ZnO-based semiconductor layer includes a +C plane at the side on which the aluminum oxide film is formed.

3. The ZnO-based semiconductor device of claim 1, wherein the aluminum oxide film has a film thickness ranging from one fold to ten folds of a monomolecular layer of the aluminum oxide.

4. The ZnO-based semiconductor device of claim 2, wherein the aluminum oxide film has a film thickness ranging from one fold to ten folds of a monomolecular layer of the aluminum oxide.

5. The ZnO-based semiconductor device of claim 1, wherein a translucent electrode is formed as a multilayer gold (Au) film including the palladium layer.

6. The ZnO-based semiconductor device of claim 2, wherein a translucent electrode is formed as a multilayer gold (Au) film including the palladium layer.

7. The ZnO-based semiconductor device of claim 3, wherein a translucent electrode is formed as a multilayer gold (Au) film including the palladium layer.

8. The ZnO-based semiconductor device of claim 1, wherein the n type ZnO-based semiconductor layer is made of Mg_YZn_1-YO (0≦

Y<

1).

9. The ZnO-based semiconductor device of claim 2, wherein the n type ZnO-based semiconductor layer is made of Mg_YZn_1-YO (0≦

Y<

1).

10. The ZnO-based semiconductor device of claim 3, wherein the n type ZnO-based semiconductor layer is made of Mg_YZn_1-YO (0≦

Y<

1).

11. The ZnO-based semiconductor device of claim 5, wherein the n type ZnO-based semiconductor layer is made of Mg_YZn_1-YO (0≦

Y<

1).

12. The ZnO-based semiconductor device of claim 1, wherein the n type ZnO-based semiconductor layer functions as a light absorption layer that absorbs UV light and detects the UV light.

13. The ZnO-based semiconductor device of claim 2, wherein the n type ZnO-based semiconductor layer functions as a light absorption layer that absorbs UV light and detects the UV light.

14. The ZnO-based semiconductor device of claim 3, wherein the n type ZnO-based semiconductor layer functions as a light absorption layer that absorbs UV light and detects the UV light.

15. The ZnO-based semiconductor device of claim 5, wherein the n type ZnO-based semiconductor layer functions as a light absorption layer that absorbs UV light and detects the UV light.

16. A manufacturing method of a ZnO-based semiconductor device, the method comprising:

exposing a surface of an n type ZnO-based semiconductor layer to an oxide radical to treat the surface;

forming an aluminum oxide film on the n type ZnO-based semiconductor layer, after exposing a surface of an n type ZnO-based semiconductor layer; and

forming a palladium layer on the aluminum oxide film, after forming an aluminum oxide film,

wherein the n type ZnO-based semiconductor layer and the palladium layer form a Schottky barrier structure.