SEMICONDUCTOR MEMORY DEVICE
First Claim
1. A semiconductor memory device comprising:
- a transistor comprising;
a drain electrode; and
an oxide semiconductor film over a top surface of the drain electrode,a dielectric film over the transistor, wherein the dielectric film is in contact with a side surface of the drain electrode;
a first conductive film and a second conductive film over the dielectric film, and connected with each other;
a capacitor comprising;
the drain electrode;
the first conductive film; and
the dielectric film between the side surface of the drain electrode and a side surface of the first conductive film,wherein the transistor is provided between the first conductive film and the second conductive film, andwherein a potential of the capacitor is controlled by the transistor.
1 Assignment
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Accused Products
Abstract
A semiconductor memory device including a bit line, a word line, a transistor, and a capacitor is provided. The transistor includes source and drain electrodes; an oxide semiconductor film in contact with at least both top surfaces of the source and drain electrodes; a gate insulating film in contact with at least a top surface of the oxide semiconductor film; a gate electrode which overlaps with the oxide semiconductor film with the gate insulating film provided therebetween; and an insulating film covering the source and drain electrodes, the gate insulating film, and the gate electrode. The transistor is provided in a mesh of a netlike conductive film when seen from the above. Here, the drain electrode and the netlike conductive film serve as one and the other of a pair of capacitor electrodes of the capacitor. A dielectric film of the capacitor includes at least the insulating film.
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Citations
9 Claims
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1. A semiconductor memory device comprising:
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a transistor comprising; a drain electrode; and an oxide semiconductor film over a top surface of the drain electrode, a dielectric film over the transistor, wherein the dielectric film is in contact with a side surface of the drain electrode; a first conductive film and a second conductive film over the dielectric film, and connected with each other; a capacitor comprising; the drain electrode; the first conductive film; and the dielectric film between the side surface of the drain electrode and a side surface of the first conductive film, wherein the transistor is provided between the first conductive film and the second conductive film, and wherein a potential of the capacitor is controlled by the transistor. - View Dependent Claims (3)
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2. A semiconductor memory device comprising:
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a transistor comprising; a source electrode and a drain electrode; an oxide semiconductor film in contact with at least a top surface of the source electrode and a top surface of the drain electrode; a gate insulating film in contact with at least a top surface of the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween, an insulating film covering the source electrode, the drain electrode, the gate insulating film, and the gate electrode; a conductive film over the insulating film, wherein the conductive film has a net shape when seen from the above; and a capacitor comprising; the drain electrode; the conductive film; and the insulating film between a side surface of the drain electrode and a side surface of the conductive film, wherein the transistor provided in a mesh formed by the conductive film. - View Dependent Claims (4, 5, 6, 7, 8, 9)
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Specification