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SEMICONDUCTOR MEMORY DEVICE

  • US 20120261664A1
  • Filed: 04/11/2012
  • Published: 10/18/2012
  • Est. Priority Date: 04/15/2011
  • Status: Active Grant
First Claim
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1. A semiconductor memory device comprising:

  • a transistor comprising;

    a drain electrode; and

    an oxide semiconductor film over a top surface of the drain electrode,a dielectric film over the transistor, wherein the dielectric film is in contact with a side surface of the drain electrode;

    a first conductive film and a second conductive film over the dielectric film, and connected with each other;

    a capacitor comprising;

    the drain electrode;

    the first conductive film; and

    the dielectric film between the side surface of the drain electrode and a side surface of the first conductive film,wherein the transistor is provided between the first conductive film and the second conductive film, andwherein a potential of the capacitor is controlled by the transistor.

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