SiC Semiconductor Power Device
First Claim
Patent Images
1. A vertical semiconductor power device, comprising:
- a SiC semiconductor body, at least part of the SiC semiconductor body constituting a drift zone;
a first contact at a first side of the SiC semiconductor body;
a second contact at a second side of the SiC semiconductor body, the first side being opposite the second side; and
a current path between the first contact and the second contact which includes at least one graphene layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor power device includes a SiC semiconductor body. At least part of the SiC semiconductor body constitutes a drift zone. A first contact is at a first side of the SiC semiconductor body. A second contact is at a second side of the SiC semiconductor body. The first side is opposite the second side. A current path between the first contact and the second contact includes at least one graphene layer.
17 Citations
25 Claims
-
1. A vertical semiconductor power device, comprising:
-
a SiC semiconductor body, at least part of the SiC semiconductor body constituting a drift zone; a first contact at a first side of the SiC semiconductor body; a second contact at a second side of the SiC semiconductor body, the first side being opposite the second side; and a current path between the first contact and the second contact which includes at least one graphene layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A vertical semiconductor power device, comprising:
-
a SiC semiconductor body, at least part of the SiC semiconductor body constituting a drift zone; a first contact at a first side of the SiC semiconductor body; a second contact at a second side of the SiC semiconductor body, the first side being opposite the second side; and a lateral channel region at the first side, the lateral channel region including at least one graphene layer. - View Dependent Claims (20)
-
-
21. A vertical semiconductor power device, comprising:
-
a SiC semiconductor body, at least part of the SiC semiconductor body constituting a drift zone; a first contact at a first side of the SiC semiconductor body; a second contact at a second side of the SiC semiconductor body, the first side being opposite the second side; a plurality of trenches extending into the SiC semiconductor body from the second side; and at least one graphene layer arranged on at least part of a sidewall of the plurality of trenches. - View Dependent Claims (22, 23)
-
-
24. A lateral semiconductor power device, comprising:
-
a SiC semiconductor body, at least part of the SiC semiconductor body constituting a drift zone; a source contact at a first side of the SiC semiconductor body; a drain contact at the first side of the SiC semiconductor body; a channel region including at least one graphene layer; and
whereinthe semiconductor power device is configured to block reverse voltages of at least 500 V and includes a lateral distance between a body region and the drain contact of at least 5 μ
m. - View Dependent Claims (25)
-
Specification