SiC FIELD EFFECT TRANSISTOR
First Claim
1. A SiC field effect transistor comprising:
- a SiC semiconductor layer; and
a MIS transistor structure including a source region of a first conductivity type provided in the SiC semiconductor layer, a body region of a second conductivity type provided in the SiC semiconductor layer in contact with the source region, a drift region of the first conductivity type provided in the SiC semiconductor layer in contact with the body region, and a gate electrode opposed to the body region with a gate insulation film interposed between the gate electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region;
wherein the MIS transistor structure further includes a barrier forming layer provided in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
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Accused Products
Abstract
A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
43 Citations
20 Claims
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1. A SiC field effect transistor comprising:
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a SiC semiconductor layer; and a MIS transistor structure including a source region of a first conductivity type provided in the SiC semiconductor layer, a body region of a second conductivity type provided in the SiC semiconductor layer in contact with the source region, a drift region of the first conductivity type provided in the SiC semiconductor layer in contact with the body region, and a gate electrode opposed to the body region with a gate insulation film interposed between the gate electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region; wherein the MIS transistor structure further includes a barrier forming layer provided in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification