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SiC FIELD EFFECT TRANSISTOR

  • US 20120261676A1
  • Filed: 12/24/2010
  • Published: 10/18/2012
  • Est. Priority Date: 12/24/2009
  • Status: Active Grant
First Claim
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1. A SiC field effect transistor comprising:

  • a SiC semiconductor layer; and

    a MIS transistor structure including a source region of a first conductivity type provided in the SiC semiconductor layer, a body region of a second conductivity type provided in the SiC semiconductor layer in contact with the source region, a drift region of the first conductivity type provided in the SiC semiconductor layer in contact with the body region, and a gate electrode opposed to the body region with a gate insulation film interposed between the gate electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region;

    wherein the MIS transistor structure further includes a barrier forming layer provided in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.

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