LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20120261691A1
• Filed: 12/09/2010
• Published: 10/18/2012
• Est. Priority Date: 09/29/2010
• Status: Abandoned Application

• Current Assignee: Enraytek Optoelectronics Co., Ltd
• Original Assignee: Enraytek Optoelectronics Co., Ltd
• Inventors: Chang, Richard Rugin, Xiao, Deyuan
• Application Number:
  US13/128,366
• Publication Number:
  US 20120261691A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/14 of a plurality of bump connectors
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

The present invention provides a light emitting device, including a base, an LED inversely mounted on the base. The LED includes a buffer layer, an LED chip on the buffer layer. The buffer layer includes a plurality of protrusions with complementary pyramid structure on a light-exiting surface of the LED. The present invention also provides a method for manufacturing a light emitting device, including: providing a substrate and forming a plurality of pyramid structures on the substrate; forming successively a buffer layer, an n-type semiconductor layer, an active layer, a p-type semiconductor layer and a contact layer on the substrate with the pyramid structures; forming an opening with a depth at least from the contact layer to a top of the n-type semiconductor layer, and forming a first electrode on the contact layer and a second electrode on a bottom of the opening; and removing the substrate. The light emitting device has a high luminous efficiency and the manufacturing method is easy to implement.

Claims

1. A light emitting device comprising:

a base; and

an LED inversely mounted on the base, the LED including a buffer layer and an LED chip on the buffer layer, the buffer layer including a plurality of protrusions with complementary pyramid structure on a light-exiting surface of the LED.

2. The light emitting device of claim 1, wherein the LED chip includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are successively located on the buffer layer.

3. The light emitting device of claim 2, wherein the LED further includes a contact layer on the LED chip.

4. The light emitting device of claim 3, wherein a surface of the contact layer between the contact layer and the LED chip is a reflecting surface which reflects light emitted from the LED chip to the light-exiting surface of the LED.

5. The light emitting device of claim 1, further comprising a reflecting film on the base for reflecting light emitted from the LED chip to the light-exiting surface of the LED.

6. The light emitting device of claim 5, further comprising a first lead and a second lead on the reflecting film, the first lead for connecting the LED to a positive terminal of a power supply, the second lead for connecting the LED to a negative terminal of the power supply.

7. The light emitting device of claim 6, wherein the LED chip includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer which are successively located on the buffer layer, and the LED further includes a contact layer on the LED chip, and a first electrode connecting the contact layer to the first lead;

and

the LED further includes a second electrode, and an opening with a depth at least from the contact layer to a top of an n-type semiconductor layer, the second electrode connecting a bottom of the opening to the second lead.

8. The light emitting device of claim 6, further comprising a cap layer which covers the reflecting film and the LED.

9. The light emitting device of claim 8, wherein the cap layer is provided with a lens structure in a light output direction of the LED.

10. A method for manufacturing a light emitting device comprising:

providing a substrate and forming a plurality of pyramid structures on the substrate;

forming successively a buffer layer, an n-type semiconductor layer, an active layer, a p-type semiconductor layer and a contact layer on the substrate with the pyramid structures;

forming an opening with a depth at least from the contact layer to a top of the n-type semiconductor layer, and forming a first electrode on the contact layer and a second electrode on a bottom of the opening; and

removing the substrate.

11. The method for manufacturing a light emitting device of claim 10, wherein the providing a substrate and forming a plurality of pyramid structures on the substrate includes:

providing a substrate;

depositing a dielectric layer on the substrate and patterning the dielectric layer to form a hard mask;

etching the substrate, with the hard mask as an etching mask, to form pyramid structures;

removing the hard mask.

12. The method for manufacturing a light emitting device of claim 11, wherein the substrate is a p-type silicon substrate of (100) lattice plane;

the etching the substrate with the hard mask as an etching mask to form pyramid structures includes;

wet etching the substrate with tetramethylammonium hydroxide solution to form pyramid structures which include (111) lattice planes of the silicon substrate as side faces and (100) lattice planes of the silicon substrate as bottom faces; and

the buffer layer is formed on the (111) lattice planes.

13. The method for manufacturing a light emitting device of claim 12, wherein in a step of the wet etching the substrate with tetramethylammonium hydroxide solution, the step has an etching time of 20 minutes and an etching temperature of 60˜

80 degrees Celsius.

14. The method for manufacturing a light emitting device of claim 12, wherein in each of the pyramid structures which include (111) lattice planes of the silicon substrate as side faces and (100) lattice planes of the silicon substrate as bottom faces, a side face and a bottom face forms an angle of 54.74°

.

15. The method for manufacturing a light emitting device of claim 12, wherein a density of the pyramid structures on the substrate is 4×

10⁴˜

1×

10⁸ per square millimeter.

16. The method for manufacturing a light emitting device of claim 12, wherein the silicon substrate is removed with potassium hydroxide solution.

17. The method for manufacturing a light emitting device of claim 10, wherein an upper surface of the first electrode on the contact layer and an upper surface of the second electrode on the bottom of the opening are on a same level.

18. The method for manufacturing a light emitting device of claim 10, further comprising:

providing a base, forming a reflecting film on the base, and forming on the reflecting film a first lead connected to a positive terminal of a power supply and a second lead connected to a negative terminal of the power supply; and

mounting the LED on the reflecting film in a way that the buffer layer faces the light output direction, the first electrode is fixed to the first lead and the second electrode is fixed to the second lead.