METHOD OF MAKING A SEMICONDUCTOR STRUCTURE USEFUL IN MAKING A SPLIT GATE NON-VOLATILE MEMORY CELL

• US 20120261769A1
• Filed: 04/13/2011
• Published: 10/18/2012
• Est. Priority Date: 04/13/2011
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Inventors: WINSTEAD, BRIAN A., HONG, CHEONG M.
• Granted Patent: US 8,643,123 B2
• Time in Patent Office: Days
• US Class Current: 257/410
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/42324 Gate electrodes for transistors with a floating gate
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence

Abstract

A semiconductor device comprises a semiconductor substrate and a select gate structure over a first portion of the semiconductor substrate. The select gate structure comprises a sidewall forming a corner with a second portion of the semiconductor substrate and a charge storage stack over an area comprising the second portion of the semiconductor substrate, the sidewall, and the corner. A corner portion of a top surface of the charge storage stack is non-conformal with the corner, and the corner portion of the top surface of the charge storage stack has a radius of curvature measuring approximately one-third of a thickness of the charge storage stack over the second portion of the substrate or greater. A control gate layer is formed over the charge storage stack. A portion of the control gate layer conforms to the corner portion of the top surface of the charge storage stack.

Claims

1. A method of making a semiconductor device comprising:

forming a select gate dielectric layer over a semiconductor substrate;

forming a select gate layer over the select gate dielectric layer;

forming a select gate sidewall of the select gate layer and the select gate dielectric layer by removing at least a portion of the select gate layer and the select gate dielectric layer, wherein

said removing further results in exposing a surface of the semiconductor substrate;

forming a charge storage stack over at least a portion of the exposed surface of the semiconductor substrate and at least a portion of the select gate sidewall, wherein

a corner portion of a top surface of the charge storage stack is non-conformal with a corner region between the select gate sidewall and the exposed surface of the semiconductor substrate, and

the corner portion of the top surface of the charge storage stack has a radius of curvature measuring approximately one-third of a thickness of the charge storage stack over the substrate surface or greater; and

forming a control gate layer over the charge storage stack.

2. The method of claim 1 wherein said forming the charge storage stack further comprises:

forming a bottom dielectric layer over the select gate sidewall and the exposed surface of the semiconductor substrate;

forming a charge storage layer over the bottom dielectric layer; and

forming a top dielectric layer over the charge storage layer, wherein

one or more of the bottom dielectric layer, the charge storage layer and the top dielectric layer are formed such that a result of said forming the charge storage stack is the radius of curvature of the corner portion of the top surface of the charge storage stack.

3. The method of claim 2 wherein said forming the top dielectric layer comprises:

forming a layer comprising silicon dioxide, using a low pressure chemical vapor deposition process, wherein

the low pressure chemical vapor deposition process comprises using tetraethyl orthosilicate (TEOS) as a precursor, and

a result of said forming the top dielectric layer is the radius of curvature of the corner portion of the top surface of the charge storage stack.

4. The method of claim 3 wherein the low pressure chemical vapor deposition process further comprises:

operating at a process temperature between 620 to 660 degrees celcius;

using a process gas flow ratio of 50 to 150 sccm nitrogen to 100-200 sccm TEOS; and

operating at a process pressure between 0.3 to 1.0 Torr.

5. The method of claim 3 wherein said forming the top dielectric layer further comprises:

forming a first top dielectric layer over the charge storage layer; and

forming a second top dielectric layer over the first top dielectric layer, wherein

said forming the second top dielectric layer comprises said forming the layer comprising silicon dioxide using the low pressure chemical vapor deposition process, wherein a result of said forming the second top dielectric layer is the radius of curvature of the corner portion of the top surface of the charge storage stack

6. The method of claim 2 wherein said forming the top dielectric layer comprises:

forming a layer comprising silicon dioxide, using a low pressure chemical vapor deposition process with dichlorosilane (DCS) as a precursor.

7. The method of claim 2 wherein said forming the bottom dielectric layer comprises:

forming a layer comprising silicon dioxide, using a low pressure chemical vapor deposition process, wherein

a result of said forming the bottom dielectric layer is a top surface of the bottom dielectric layer is non-conformal with the corner region between the select gate sidewall and the exposed surface of the semiconductor substrate, and

another result of said forming the bottom dielectric layer is the radius of curvature of the corner portion of the top surface of the charge storage stack.

8. The method of claim 2, wherein

the charge storage layer is formed such that a top surface of the charge storage layer is non-conformal with the corner region between the select gate sidewall and the exposed surface of the semiconductor substrate, and

a result of said forming the charge storage layer is the radius of curvature of the corner portion of the top surface of the charge storage stack.

9. The method of claim 2 wherein the radius of curvature of the corner portion of the top surface of the charge storage stack is at least 100 Angstroms.

10. The method of claim 2, wherein

said forming the bottom dielectric layer comprises growing an oxide layer over the select gate sidewall and the exposed surface of the semiconductor substrate,

said forming the charge storage layer comprises forming a layer comprising at least one of nanocrystals and nitride, and

said forming the top dielectric layer comprises depositing an oxide layer.

11. The method of claim 10, wherein

said bottom dielectric layer comprises a layer thickness between 40 to 100 Å

ngstroms,

said charge storage layer comprises a layer thickness between 50 to 300 Å

ngstroms, and

said top dielectric layer comprises a layer thickness between 80 to 250 Å

ngstroms.

12. The method of claim 2, wherein

the bottom dielectric layer comprises an oxide layer of a thickness between 40 to 100 Å

ngstroms,

the charge storage layer comprises a polysilicon layer of a thickness between 300-500 Å

ngstroms, and

the top dielectric layer comprises an oxide layer of a thickness between 80 to 250 Å

ngstroms.

13. The method of claim 1 further comprising:

forming the control gate layer to conform to the corner portion of the top surface of the charge storage stack.

14. A semiconductor device comprising:

a semiconductor substrate;

a select gate structure over a first portion of the semiconductor substrate, wherein

the select gate structure comprises a sidewall forming a corner with a second portion of the semiconductor substrate;

a charge storage stack over an area comprising the second portion of the semiconductor substrate, the sidewall, and the corner, wherein

a corner portion of a top surface of the charge storage stack is non-conformal with the corner, and

the corner portion of the top surface of the charge storage stack has a radius of curvature measuring approximately one-third of a thickness of the charge storage stack over the second portion of the substrate or greater; and

a control gate layer over the charge storage stack, wherein a portion of the control gate layer conforms to the corner portion of the top surface of the charge storage stack.

15. The semiconductor device of claim 14 wherein the charge storage stack further comprises:

a bottom dielectric layer over the sidewall and the surface of the second portion of the semiconductor substrate;

a charge storage layer over the bottom dielectric layer; and

a top dielectric layer over the charge storage layer, wherein

one or more of the bottom dielectric layer, the charge storage layer, and the top dielectric layer are formed such that a corner portion of a top surface of the layer is non-conformal with the corner and a result of said forming is the radius of curvature of the corner portion of the top surface of the charge storage stack.

16. The semiconductor device of claim 15 wherein the top dielectric layer further comprises:

a first top dielectric layer over the charge storage layer; and

a second top dielectric layer over the first top dielectric layer, wherein

the second top dielectric layer comprises silicon dioxide, and

the second top dielectric layer provides the radius of curvature of the corner portion of the top surface of the charge storage stack.

17. The semiconductor device of claim 15 wherein the top dielectric layer further comprises:

a layer of silicon dioxide formed using a low pressure chemical vapor deposition process having tetraethyl orthosilicate (TEOS) as a precursor, wherein

the top dielectric layer provides the radius of curvature of the corner portion of the top surface of the charge storage stack.

18. The semiconductor device of claim 15 wherein the top dielectric layer further comprises:

a layer of silicon dioxide formed using a low pressure chemical vapor deposition process having dichlorosilane (DCS) as a precursor, wherein

the top dielectric layer provides the radius of curvature of the corner portion of the top surface of the charge storage stack.

19. The semiconductor device of claim 14 wherein the select gate structure further comprises:

a select gate dielectric layer over the first portion of the semiconductor substrate;

a select gate conductive layer over the select gate dielectric layer; and

a select gate anti-reflective coating layer over the select gate conductive layer.

20. The semiconductor device of claim 14 further comprising:

a doped region implanted in the semiconductor substrate, wherein the doped region is adjacent to the sidewall of the select gate structure and beneath the control gate layer.