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Wide and Deep Oxide Trench in A Semiconductor Substrate with Interspersed Vertical Oxide Ribs

  • US 20120261791A1
  • Filed: 06/29/2012
  • Published: 10/18/2012
  • Est. Priority Date: 12/15/2009
  • Status: Active Grant
First Claim
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1. A method of forming a large deep oxide trench in a semiconductor substrate comprising:

  • a) forming, in the semiconductor substrate, a plurality of interim trenches separated by a corresponding number of remaining semiconductor mesas between the interim trenches; and

    b) oxidizing the remaining semiconductor mesas until they are substantially converted to oxide.

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