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Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates

  • US 20120264246A1
  • Filed: 04/14/2011
  • Published: 10/18/2012
  • Est. Priority Date: 04/14/2011
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate;

    forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer;

    transforming portions of a surface the second III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation;

    forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and

    selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.

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