Method of Selective Photo-Enhanced Wet Oxidation for Nitride Layer Regrowth on Substrates
First Claim
1. A method comprising:
- forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate;
forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer;
transforming portions of a surface the second III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation;
forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and
selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
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Abstract
Various embodiments of the present disclosure pertain to selective photo-enhanced wet oxidation for nitride layer regrowth on substrates. In one aspect, a method may comprise: forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of the first III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation.
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Citations
20 Claims
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1. A method comprising:
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forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; transforming portions of a surface the second III-nitride layer into a plurality of III-oxide stripes by photo-enhanced wet oxidation; forming a plurality of III-nitride nanowires with a second low bandgap energy on the second III-nitride layer between the III-oxide stripes; and selectively transforming at least some of the III-nitride nanowires into III-oxide nanowires by selective photo-enhanced oxidation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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forming a first III-nitride layer with a first low bandgap energy on a first surface of a C plane (0001) sapphire substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; forming a light-emitting diode (LED) structure over the second III-nitride layer; and forming, at least in part by selective photo-enhanced oxidation, in the LED structure a plurality of air gaps that are parallel to one another and adjacent the second III-nitride layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A method of suppressing screw dislocation in a light-emitting diode (LED) structure, the method comprising:
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forming a first III-nitride layer with a first low bandgap energy on a first surface of a substrate; forming a second III-nitride layer with a first high bandgap energy on the first III-nitride layer; forming a surface passivation layer of III-oxide in a V-notch groove that is in the second III-nitride layer or in a combination of the second III-nitride layer and the first III-nitride layer by selective photo-enhanced oxidation. - View Dependent Claims (20)
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Specification