FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS

• US 20120267340A1
• Filed: 03/15/2012
• Published: 10/25/2012
• Est. Priority Date: 03/18/2011
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Hasebe, Kazuhide, KAKIMOTO, Akinobu, Takagi, Satoshi, Ikeuchi, Toshiyuki, Komori, Katsuhiko
• Granted Patent: US 9,005,459 B2
• Time in Patent Office: Days
• US Class Current: 216/37
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32779 of batches of workpieces
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67109 mainly by convection

Abstract

A disclosed film deposition method includes steps of loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves; depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber; etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and alternately repeating the step of depositing and the step of etching.

Claims

1. A film deposition method comprising steps of:

loading plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves;

depositing a silicon oxide film on the plural substrates by supplying a silicon-containing gas and an oxygen-containing gas to the reaction chamber;

etching the silicon oxide film deposited on the plural substrates in the step of depositing by supplying a fluorine-containing gas and an ammonia gas to the reaction chamber; and

alternately repeating the step of depositing and the step of etching.

2. The film deposition method of claim 1, wherein an etching rate of the silicon oxide film deposited on an upper end part of side walls of the concave part is greater than an etching rate of the silicon oxide film deposited on a bottom area of the concave part.

3. The film deposition method of claim 1, further comprising a step of setting an etching condition suitable to be used in the step of etching, the step being carried out after the step of depositing.

4. The film deposition method of claim 1, further comprising a step of setting an etching condition suitable to be used in the step of depositing, the step being carried out after the step of etching.

5. The film deposition method of claim 1, wherein the fluorine-containing gas is one of fluorinate acid gas and nitrogen trifluoride gas.

6. A film deposition apparatus comprising:

a substrate supporting member that supports plural substrates each of which includes a pattern including a concave part in a reaction chamber in the form of shelves;

the reaction chamber that has a cylindrical shape with a closed top and an open bottom, the reaction chamber accommodating the substrate supporting member;

a silicon-containing gas supplying part that supplies a silicon-containing gas to the plural substrates supported by the substrate supporting member;

an oxygen-containing gas supplying part that supplies an oxygen-containing gas to the plural substrates supported by the substrate supporting member;

a fluorine-containing gas supplying part that supplies a fluorine-containing gas to the plural substrates supported by the substrate supporting member;

an ammonia gas supplying part that supplies an ammonia gas to the plural substrates supported by the substrate supporting member; and

a controlling part that controls the silicon-containing gas supplying part, the oxygen-containing gas supplying part, the fluorine-containing gas supplying part, and the ammonia-containing gas supplying part so that a silicon oxide film is deposited on the plural substrates by supplying the silicon-containing gas and the oxygen-containing gas to the reaction chamber, and the silicon oxide film deposited on the plural substrates is etched by supplying the fluorine-containing gas and the ammonia gas to the reaction chamber.

7. The film deposition apparatus of claim 6, wherein an etching rate of the silicon oxide film deposited on an upper end part of side walls of the concave part is greater than an etching rate of the silicon oxide film deposited on a bottom area of the concave part.

8. The film deposition apparatus of claim 6, wherein the fluorine-containing gas is one of fluorinate acid gas and nitrogen trifluoride gas.