LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A method of fabricating a light emitting device comprising:
- providing a substrate;
forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer;
forming a mesa to expose partial of the first conductivity semiconductor layer, wherein the first conductivity semiconductor layer includes a first surface which is connected to a surface of the substrate, a second surface which is parallel to the surface of the substrate and a third surface which is connected between the second surface and the active layer; and
etching the first conductivity semiconductor layer and forming a rough structure on at least one of the first surface and the third surface.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating a light emitting device comprising: providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa on the epitaxial stack to expose partial of the first conductivity semiconductor layer; layer and etching the surface of the first conductivity semiconductor layer and forming a least one rough structure on the surface of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer is sandwiched by the substrate and the active layer.
-
Citations
21 Claims
-
1. A method of fabricating a light emitting device comprising:
-
providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa to expose partial of the first conductivity semiconductor layer, wherein the first conductivity semiconductor layer includes a first surface which is connected to a surface of the substrate, a second surface which is parallel to the surface of the substrate and a third surface which is connected between the second surface and the active layer; and etching the first conductivity semiconductor layer and forming a rough structure on at least one of the first surface and the third surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A light emitting device comprising:
-
a substrate; an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer, wherein the first conductivity semiconductor layer includes a first surface connected to a surface of the substrate, a second surface which is parallel to the surface of the substrate and a third surface which is connected between the second surface and the active layer; and a mesa exposing partial of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer further comprises rough structure on at least one of the first surface and the third surface. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
-
-
21. A method of fabricating a light emitting device comprising:
-
providing a substrate; forming an epitaxial stack on the substrate wherein the epitaxial stack comprising a first conductivity semiconductor layer, an active layer and a second conductivity semiconductor layer; forming a mesa to expose partial of the first conductivity semiconductor layer wherein the first conductivity semiconductor layer includes a first surface which is connected to the surface of the substrate, a second surface which is parallel to the surface of the substrate and a third surface which is connected between the second surface to the active layer; etching the first conductivity semiconductor layer and forming at least a rough structure on the first and the third surface, and wherein the second surface further comprises a first level rough section having a depth h1, a substantially smooth section and a second level rough section having a depth h2 different from h1, and wherein the second level rough section is adjacent to the substantially smooth section and the first level rough section is adjacent to the second level rough section.
-
Specification