SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising a first memory comprising:
- a first transistor, a second transistor, a third transistor, and a fourth transistor electrically connected to each other in series in order; and
a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor electrically connected to each other in series in order,wherein one of a source and a drain of the first transistor and one of a source and a drain of the fifth transistor are electrically connected to a high power supply potential line,wherein one of a source and a drain of the fourth transistor and one of a source and a drain of the eighth transistor are electrically connected to a low power supply potential line,wherein a gate of the second transistor, a gate of the third transistor, a gate of the sixth transistor, and a gate of the seventh transistor are electrically connected to a first terminal,wherein a gate of the fifth transistor and a gate of the eighth transistor are electrically connected to a second terminal,wherein the second terminal is electrically connected between the second transistor and the third transistor,wherein a gate of the first transistor and a gate of the fourth transistor are electrically connected to a third terminal,wherein the third terminal is electrically connected between the sixth transistor and the seventh transistor,wherein each of the first transistor and the fifth transistor is a p-channel transistor,wherein each of the second transistor, the third transistor, the sixth transistor, and the seventh transistor is a transistor comprising an oxide semiconductor layer, andwherein each of the fourth transistor and the eighth transistor is an n-channel transistor.
1 Assignment
0 Petitions
Accused Products
Abstract
A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained.
8 Citations
12 Claims
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1. A semiconductor device comprising a first memory comprising:
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a first transistor, a second transistor, a third transistor, and a fourth transistor electrically connected to each other in series in order; and a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor electrically connected to each other in series in order, wherein one of a source and a drain of the first transistor and one of a source and a drain of the fifth transistor are electrically connected to a high power supply potential line, wherein one of a source and a drain of the fourth transistor and one of a source and a drain of the eighth transistor are electrically connected to a low power supply potential line, wherein a gate of the second transistor, a gate of the third transistor, a gate of the sixth transistor, and a gate of the seventh transistor are electrically connected to a first terminal, wherein a gate of the fifth transistor and a gate of the eighth transistor are electrically connected to a second terminal, wherein the second terminal is electrically connected between the second transistor and the third transistor, wherein a gate of the first transistor and a gate of the fourth transistor are electrically connected to a third terminal, wherein the third terminal is electrically connected between the sixth transistor and the seventh transistor, wherein each of the first transistor and the fifth transistor is a p-channel transistor, wherein each of the second transistor, the third transistor, the sixth transistor, and the seventh transistor is a transistor comprising an oxide semiconductor layer, and wherein each of the fourth transistor and the eighth transistor is an n-channel transistor. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising a first memory comprising:
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a first transistor, a second transistor, a third transistor, and a fourth transistor electrically connected to each other in series in order; and a fifth transistor, a sixth transistor, a seventh transistor, and an eighth transistor electrically connected to each other in series in order, wherein one of a source and a drain of the first transistor and one of a source and a drain of the fifth transistor are electrically connected to a high power supply potential line, wherein one of a source and a drain of the fourth transistor and one of a source and a drain of the eighth transistor are electrically connected to a low power supply potential line, wherein a gate of the first transistor, a gate of the fourth transistor, a gate of the fifth transistor, and a gate of the eighth transistor are electrically connected to a first terminal, wherein a gate of the sixth transistor and a gate of the seventh transistor are electrically connected to a second terminal, wherein the second terminal is electrically connected between the second transistor and the third transistor, wherein a gate of the second transistor and a gate of the third transistor are electrically connected to a third terminal, wherein the third terminal is electrically connected between the sixth transistor and the seventh transistor, wherein each of the first transistor, the fourth transistor, the fifth transistor, and the eighth transistor is a transistor comprising an oxide semiconductor layer, wherein each of the second transistor and the sixth transistor is a p-channel transistor, and wherein each of the third transistor and the seventh transistor is an n-channel transistor. - View Dependent Claims (5, 6)
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7. A semiconductor device comprising a first memory comprising:
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a first transistor, a second transistor, and a third transistor electrically connected to each other in series in order; and a fourth transistor, a fifth transistor, and a sixth transistor electrically connected to each other in series in order, wherein one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor are electrically connected to a high power supply potential line, wherein one of the source and the drain of the third transistor and one of the source and the drain of the sixth transistor are electrically connected to a low power supply potential line, wherein a gate of the first transistor and a gate of the third transistor are electrically connected to a third terminal, wherein the third terminal is electrically connected between the fifth transistor and the sixth transistor, wherein a gate of the fourth transistor and a gate of the sixth transistor are electrically connected to a second terminal, wherein the second terminal is electrically connected between the second transistor and the third transistor, wherein a gate of the second transistor and a gate of the fifth transistor are electrically connected to a first terminal, wherein each of the first transistor and the fourth transistor is a p-channel transistor, and wherein each of the second transistor, the third transistor, the fifth transistor, and the sixth transistor is a transistor comprising an oxide semiconductor layer. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising a first memory comprising:
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a first transistor, a second transistor, and a third transistor electrically connected to each other in series in order; and a fourth transistor, a fifth transistor, and a sixth transistor electrically connected to each other in series in order, wherein one of a source and a drain of the first transistor and one of a source and a drain of the fourth transistor are electrically connected to a high power supply potential line, wherein one of the source and the drain of the third transistor and one of the source and the drain of the sixth transistor are electrically connected to a low power supply potential line, wherein a gate of the first transistor and a gate of the fourth transistor are electrically connected to a first terminal, wherein a gate of the fifth transistor and a gate of the sixth transistor are electrically connected to a second terminal, wherein the second terminal is electrically connected between the second transistor and the third transistor, wherein a gate of the second transistor and a gate of the third transistor are electrically connected to a third terminal, wherein the third terminal is electrically connected between the fifth transistor and the sixth transistor, wherein each of the second transistor and the fifth transistor is a p-channel transistor, and wherein each of the first transistor, the third transistor, the fourth transistor, and the sixth transistor is a transistor comprising an oxide semiconductor layer. - View Dependent Claims (11, 12)
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Specification