CLEANING METHOD AND FILM DEPOSITING METHOD

• US 20120269970A1
• Filed: 03/26/2012
• Published: 10/25/2012
• Est. Priority Date: 03/29/2011
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Sugita, Kippei, IDO, Yasuyuki, Yamaguchi, Tatsuya
• Application Number:
  US13/429,564
• Publication Number:
  US 20120269970A1
• Time in Patent Office: Days
• US Class Current: 427/255.394
• CPC Class Codes: C23C 16/02 Pretreatment of the material to be coated C23C16/04 takes precedence
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers

Abstract

A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method including the steps of: generating an oxygen atmosphere in the film deposition chamber, and removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360° C. to 540° C. in the oxygen atmosphere and oxidizing the polyimide.

Claims

1. A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method comprising the steps of:

generating an oxygen atmosphere in the film deposition chamber; and

removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360°

C. to 540°

C. in the oxygen atmosphere and oxidizing the polyimide.

2. The cleaning method as claimed in claim 1,

wherein the step of generating the oxygen atmosphere includes generating an oxygen atmosphere having a partial pressure of oxygen equal to or greater than 20265 Pa in the film deposition chamber,

wherein the heating is performed in the oxygen atmosphere having the partial pressure of oxygen equal to or greater than 20265 Pa.

3. A film depositing method for depositing a film on at least a substrate by feeding source gases into a film deposition chamber, the method comprising the steps of:

performing a film depositing process including

conveying in the substrate to the film deposition chamber,

feeding an adhesion accelerating agent gas into the film deposition chamber,

treating a surface of the substrate with the adhesion accelerating agent gas,

depositing a polyimide film on the substrate by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, and

conveying out the substrate having the polyimide film deposited thereon from the film deposition chamber; and

performing a cleaning process including

generating an oxygen atmosphere in the film deposition chamber, and

removing polyimide remaining in the film deposition chamber by heating the film deposition chamber in the oxygen atmosphere and oxidizing the polyimide.

4. The method as claimed in claim 3, wherein the film depositing process and the cleaning process are performed alternately.

5. The method as claimed in claim 3, wherein the cleaning process is performed once after repeating the film depositing process a predetermined number of times.

6. The method as claimed in claim 3, wherein the conveying in of the substrate includes conveying in a substrate retaining part having a plurality of the substrates vertically accommodated therein to the film deposition chamber, wherein the conveying out of the substrate includes conveying out the substrate retaining part from the film deposition chamber.

7. The method as claimed in claim 3, wherein the heating includes heating the film deposition chamber to a temperature of 360°

C. to 540°

C.

8. The method as claimed in claim 3,

wherein the generating of the oxygen atmosphere includes generating an oxygen atmosphere having a partial pressure of oxygen equal to or greater than 20265 Pa in the film deposition chamber,

wherein the heating is performed in the oxygen atmosphere having the partial pressure of oxygen equal to or greater than 20265 Pa.