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MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

  • US 20120270375A1
  • Filed: 04/13/2012
  • Published: 10/25/2012
  • Est. Priority Date: 04/22/2011
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an insulating layer;

    etching the insulating layer to form a region having a curved surface with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm;

    forming a semiconductor layer over the insulating layer so as to be in contact with at least the region having the curved surface;

    forming a source electrode and a drain electrode electrically connected to the semiconductor layer;

    forming a gate insulating layer over the semiconductor layer; and

    forming a gate electrode over the gate insulating layer.

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