MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating layer;
etching the insulating layer to form a region having a curved surface with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm;
forming a semiconductor layer over the insulating layer so as to be in contact with at least the region having the curved surface;
forming a source electrode and a drain electrode electrically connected to the semiconductor layer;
forming a gate insulating layer over the semiconductor layer; and
forming a gate electrode over the gate insulating layer.
1 Assignment
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Accused Products
Abstract
To provide a semiconductor device which prevents defects and achieves miniaturization. A projecting portion or a trench (a groove portion) is formed in an insulating layer and a channel formation region of a semiconductor layer is provided in contact with the projecting portion or the trench, so that the channel formation region is extended in a direction perpendicular to a substrate. Thus, miniaturization of the transistor can be achieved and an effective channel length can be extended. In addition, before formation of the semiconductor layer, an upper-end corner portion of the projecting portion or the trench with which the semiconductor layer is in contact is subjected to round chamfering, so that a thin semiconductor layer can be formed with good coverage.
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Citations
18 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating layer; etching the insulating layer to form a region having a curved surface with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm; forming a semiconductor layer over the insulating layer so as to be in contact with at least the region having the curved surface; forming a source electrode and a drain electrode electrically connected to the semiconductor layer; forming a gate insulating layer over the semiconductor layer; and forming a gate electrode over the gate insulating layer. - View Dependent Claims (2, 3)
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4. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating layer; etching the insulating layer to form a first region with a first thickness and a second region with a second thickness smaller than the first thickness; processing an edge portion of the first region into a curved shape with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm with rare gas plasma treatment; forming a semiconductor layer in contact with the first region at least including the edge portion processed into the curved shape and with at least part of the second region; forming a source electrode and a drain electrode electrically connected to the semiconductor layer; forming a gate insulating layer over the semiconductor layer; and forming a gate electrode over the gate insulating layer. - View Dependent Claims (5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating layer; forming a metal layer over the insulating layer; forming a resist mask over the metal layer; patterning the metal layer with the resist mask; removing the resist mask after patterning the metal layer; etching the insulating layer with the patterned metal layer used as a mask to form a first region with a first thickness and a second region with a second thickness smaller than the first thickness, the first region being below the patterned metal layer; removing the patterned metal layer and processing an edge portion of the first region into a curved shape with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm, by dry etching on the patterned metal layer with one or both of a gas containing fluorine and a gas containing chlorine; forming a semiconductor layer in contact with the first region at least including the edge portion processed into the curved shape and with at least part of the second region; forming a source electrode and a drain electrode electrically connected to the semiconductor layer; forming a gate insulating layer over the semiconductor layer; and forming a gate electrode over the gate insulating layer. - View Dependent Claims (10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating layer; forming a resist mask over the insulating layer; performing heat treatment on the resist mask to obtain a resist mask having a curved surface; etching the insulating layer with the resist mask having the curved surface to form a first region with a first thickness and a second region with a second thickness smaller than the first thickness, the first region being below the resist mask having the curved surface and having an edge portion processed into a curved shape with a radius of curvature of greater than or equal to 20 nm and less than or equal to 60 nm; forming a semiconductor layer in contact with the first region at least including the edge portion processed into the curved shape and with at least part of the second region; forming a source electrode and a drain electrode electrically connected to the semiconductor layer; forming a gate insulating layer over the semiconductor layer; and forming a gate electrode over the gate insulating layer. - View Dependent Claims (15, 16, 17, 18)
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Specification